N-Channel MOSFET. TK25E60X Datasheet
Silicon N-Channel MOSFET
|Total Page||10 Pages|
MOSFETs Silicon N-Channel MOS (DTMOS-H)
• Switching Voltage Regulators
(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)
3. Packaging and Internal Circuit
2: Drain (Heatsink)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Drain current (DC)
Drain current (pulsed)
Single-pulse avalanche energy
Reverse drain current (DC)
Reverse drain current (pulsed)
(Tc = 25)
-55 to 150
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
5. Thermal Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 13.9 mH, RG = 25 Ω, IAR = 6.2 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
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