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TK9A60D

Toshiba Semiconductor
Part Number TK9A60D
Manufacturer Toshiba Semiconductor
Description Silicon N-channel MOSFET
Published Sep 19, 2014
Detailed Description TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A60D Switching Regulator Applications Ф3...
Datasheet PDF File TK9A60D PDF File

TK9A60D
TK9A60D

Overview
TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A60D Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5 0.
69 ± 0.
15 Ф0.
2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 9 36 45 260 9 4.
5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 2.
54 0.
64 ± 0.
15 15.
0 ± 0.
3 • • • • Low drain-source ON-resistance: RDS (ON) = 0.
67 Ω(typ.
) High forward transfer admittance: |Yfs| = 4.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 600...


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