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TPN4R712MD
Silicon P-Channel MOSFET
Description
MOSFET
s Silicon P-Channel MOS (U-MOS) TPN4R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging an...
Toshiba
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