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TSM1N80 MOSFET Datasheet PDFN-Channel Power MOSFET N-Channel Power MOSFET |
| Part Number | TSM1N80 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | TSM1N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 0. 3A, 21. 6Ω FEATU RES • Advanced planar process • 100 % avalanche tested • Fast switching A PPLICATION • Power Supply • Lightin g KEY PERFORMANCE PARAMETERS PARAMETE R VALUE UNIT VDS RDS(on) (max) Qg 8 00 21. 6 5 V Ω nC SOT-223 Notes: Mo isture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAM ETER SYMBOL LIMIT Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive . |
| Manufacture | Taiwan Semiconductor |
| Datasheet |
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| Part Number | TSM1N80 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | TSM1N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 0. 3A, 21. 6Ω FEATU RES • Advanced planar process • 100 % avalanche tested • Fast switching A PPLICATION • Power Supply • Lightin g KEY PERFORMANCE PARAMETERS PARAMETE R VALUE UNIT VDS RDS(on) (max) Qg 8 00 21. 6 5 V Ω nC SOT-223 Notes: Mo isture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAM ETER SYMBOL LIMIT Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive . |
| Manufacture | Taiwan Semiconductor |
| Datasheet |
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