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TSM60N06

Taiwan Semiconductor

N-Channel Power MOSFET


Description
TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =10V ID (A) 66 Features ● Advanced Trench Technology ● Low RDS(ON) 7.3mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) ● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing TSM60...



Taiwan Semiconductor

TSM60N06

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