SCR. TYN825RG Datasheet

TYN825RG Datasheet PDF

Part TYN825RG
Description Standard 25A SCR
Feature TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs A G K A A G A K G K AG D²PAK TO-22.
Manufacture STMicroelectronics
Datasheet
Download TYN825RG Datasheet

TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs TYN825RG Datasheet




TYN825RG
TN2540, TXN625, TYN625,
TYN825, TYN1225
Standard 25 A SCRs
A
G
K
A
A
G
A
K
G
K
AG
D²PAK
TO-220AB
K
AG
TO-220AB Insulated
Datasheet - production data
Features
On-state rms current, IT(RMS) 25 A
Repetitive peak off-state voltage, VDRM/VRRM
600 to 1200 V
Triggering gate current, IGT 40 mA
Insulated package TO-220AB ins
– Insulating voltage 2500 V rms
– UL1557 certified (file ref. E81734)
Description
These standard 25 A SCRs are suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current
capabilities.
TXN625RG is packaged in TO-220AB ins.
Order code
TN2540-600G-TR
TN2540-800G-TR
TXN625RG
TYN625RG
TYN825RG
TYN1225RG
Table 1. Device summary
Voltage VDRM/VRRM
600 V
800 V
1200 V
Y
Y
Y
Y
Y
Y
Sensitivity
IGT
40 mA
40 mA
40 mA
40 mA
40 mA
40 mA
Package
D2PAK
D2PAK
TO-220AB ins
TO-220AB
TO-220AB
TO-220AB
August 2014
This is information on a product in full production.
DocID7478 Rev 9
1/11
www.st.com



TYN825RG
Characteristics
1
Characteristics
TN2540, TXN625, TYN625, TYN825, TYN1225
Symbol
Table 2. Absolute ratings (limiting values)
Parameter
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
TO-220AB,
On-state rms current (180 °Conduction angle) D2PAK
Tc = 100 °C
TO-220AB ins Tc = 83 °C
Average on-state current (180 °Conduction angle)
Tc = 100 °C
Non repetitive surge peak on-state current
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state current
IG = 2 x IGT, tr 100 ns
F = 60 Hz
Tj = 125 °C
Peak gate current
tp = 20 µs
Tj = 125 °C
Average gate power dissipation
Tj = 125 °C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Value
25
16
314
300
450
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
Symbol
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Value
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 x IGT
VD = 67% VDRM Gate open
ITM = 50 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
4
40
1.3
0.2
50
90
1500
1.6
0.77
14
5
4
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/11
DocID7478 Rev 9




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