U16NB50 Datasheet

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U16NB50 Datasheet - STU16NB50

U16NB50   U16NB50  

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STU16NB50 N-CHANNEL 600V - 0.45Ω - 10. 7A - Max220 PowerMESH™ MOSFET PRELIMI NARY DATA TYPE ST U16NB50 s s s s s s V DSS 500 V R DS(on) < 0.33 Ω ID 15 .6 A TYPICAL RDS(on) = 0.4 Ω EXTREME LY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO S OURCE VOLTAGE RATING 1 2 3 DESCRIPT ION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has des igned an advanced family of power MOSFE Ts with outstanding performances. The n ew patent pending strip layout coupled with the Company’s proprietary edge t ermination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg

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