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U311 Datasheet

Part Number U311
Manufacturers Siliconix
Logo Siliconix
Description n-channel JFET
Datasheet U311 DatasheetU311 Datasheet (PDF)

  U311   U311
n-channel JFET designed for • • • • VHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage -25 V Gate Current . 10mA Total Device Dissipation (Derate 1.7 mWrC) 300 mW Storage Temperature Range .... -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ... 300°C H Siliconix ----- Performance Curves NZB See Section 4 BENEFITS • High Power Gain 16 dB Typ @ 105 MHz, CommonGate 11 dB Typ @450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ@ 105 MHz 2.7 dB Typ @450 MHz • Wide Dynamic Range-Greater than 100 dB TO-72 See Section 6 o~: ~~ ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 1- 2 1- S 3T 1- A 4T I-I 5C i- 6 IGSS Gate Reverse Current BVGSS Gate-Source Breakdown Voltage VGS(off) Gate-Source Cutoff Voltage lOSS Saturation Drain Current (Note 1) VGS(f) Gate·Source Forward Voltage -7 B0 -Y 9N '10 9fg gog Cgd Cgs Com.






Part Number U3144
Manufacturers UTC
Logo UTC
Description SENSITIVE HALL-EFFECT SWITCHES
Datasheet U311 DatasheetU3144 Datasheet (PDF)

  U311   U311
UNISONIC TECHNOLOGIES CO., LTD U3144 Preliminary LINEAR INTEGRATED CIRCUIT SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION  DESCRIPTION UTC U3144 is a semiconductor integrated circuit utilizing the Hall effect. It has been so designed as to operate in the alternating magnetic field especially at low supply voltage and operation over extended temperature ranges to +85°С.This Hall IC is suitable for application to various kinds of sensors, contact-less switches, and the like.  FEATURES * Wide temperature operation range of -20°С ~ +85°С * Wide supply voltage range of 4.5V to 24V * TTL and MOS IC are directly drivable by the output * Reverse Battery Protection * Activate wi.






Part Number U312
Manufacturers National Semiconductor
Logo National Semiconductor
Description TRANSISTOR
Datasheet U311 DatasheetU312 Datasheet (PDF)

  U311   U311
www.DataSheet4U.com DataSheet4U.com ee DataSh DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com m et4U.co DataSheet4U.com DataSheet 4 U .com .






Part Number U310
Manufacturers InterFET
Logo InterFET
Description N-Channel JFET
Datasheet U311 DatasheetU310 Datasheet (PDF)

  U311   U311
InterFET Product Folder Technical Support Order Now U310 U310 N-Channel JFET Features • InterFET N0072L Geometry • Low Noise: 2 nV/√Hz Typical • Low Ciss: 4pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Mixers • Oscillators • VHF/UHF Amplifiers Description The -25V InterFET U310 JFET is targeted for higher gain VHF amplifiers, mixers, and oscillators. Gate leakages are typically less than 10pA at room temperatures. Gate/Case Drain 2 Source TO-52 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation C.






Part Number U310
Manufacturers Vishay
Logo Vishay
Description N-Channel JFETs
Datasheet U311 DatasheetU310 Datasheet (PDF)

  U311   U311
J/SST/U308 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J308 J309 J310 SST308 SST309 SST310 U309 U310 VGS(off) (V) −1 to −6.5 −1 to −4 −2 to −6.5 −1 to −6.5 −1 to −4 −2 to −6.5 −1 to −4 −2.5 to −6 J308 J309 J310 SST308 SST309 SST310 U309 U310 V(BR)GSS Min (V) −25 −25 −25 −25 −25 −25 −25 −25 gfs Min (mS) 8 10 8 8 10 8 10 10 IDSS Min (mA) 12 12 24 12 12 24 12 24 FEATURES D Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz D Very Low Noise: 2.7 dB @ 450 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation BENEFITS D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Sig.






n-channel JFET

n-channel JFET designed for • • • • VHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage -25 V Gate Current . 10mA Total Device Dissipation (Derate 1.7 mWrC) 300 mW Storage Temperature Range .... -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ... 300°C H Siliconix ----- Performance Curves NZB See Section 4 BENEFITS • High Power Gain 16 dB Typ @ 105 MHz, CommonGate 11 dB Typ @450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ@ 105 MHz 2.7 dB Typ @450 MHz • Wide Dynamic Range-Greater than 100 dB TO-72 See Section 6 o~: ~~ ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 1- 2 1- S 3T 1- A 4T I-I 5C i- 6 IGSS Gate Reverse Current BVGSS Gate-Source Breakdown Voltage VGS(off) Gate-Source Cutoff Voltage lOSS Saturation Drain Current (Note 1) VGS(f) Gate·Source Forward Voltage -7 B0 -Y 9N '10 9fg gog Cgd Cgs Common-Gate Forward Transconductance (Note 1) Common-Gate Output Conductance Gate·Dral" Capacitance Gate·Source Capacitance Min -25 -1 20 10.000 Max Typ Unit Test Condition. -150 -150 pA VGS=-15V.VOS=0 nA 150·C IG = -lpA, VOS = 0 V -6 VOS= 10V,IO= 1 nA no "If!. VDS=1QV,'lGS=O 1 V IG = 1 rnA, VOS = 0 17,000 pmho VOS = 10 V, 10 = 10 mA 250 if = 1 kHz 2.5 pF VOG= 10V,IO= 5mA if= 1 MHz 5.0 NOTE: 1. Pulse test duration = 2 ms. NZB 3-122 Siliconix .



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