U311 Datasheet
Part Number |
U311 |
Manufacturers |
Siliconix |
Logo |
|
Description |
n-channel JFET |
Datasheet |
U311 Datasheet (PDF) |
n-channel JFET
designed for • • •
• VHF Amplifiers • Oscillators • Mixers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage -25 V
Gate Current . 10mA
Total Device Dissipation (Derate 1.7 mWrC) 300 mW
Storage Temperature Range .... -65 to +200°C
Lead Temperature (1/16" from case for 10 seconds)
...
300°C
H
Siliconix
-----
Performance Curves NZB See Section 4
BENEFITS • High Power Gain
16 dB Typ @ 105 MHz, CommonGate 11 dB Typ @450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ@ 105 MHz 2.7 dB Typ @450 MHz • Wide Dynamic Range-Greater than 100 dB
TO-72 See Section 6
o~: ~~
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
1-
2
1- S
3T
1- A
4T I-I
5C
i-
6
IGSS Gate Reverse Current
BVGSS Gate-Source Breakdown Voltage
VGS(off) Gate-Source Cutoff Voltage
lOSS
Saturation Drain Current (Note 1)
VGS(f) Gate·Source Forward Voltage
-7 B0
-Y
9N
'10
9fg gog Cgd Cgs
Com.
Part Number |
U3144 |
Manufacturers |
UTC |
Logo |
|
Description |
SENSITIVE HALL-EFFECT SWITCHES |
Datasheet |
U3144 Datasheet (PDF) |
UNISONIC TECHNOLOGIES CO., LTD
U3144
Preliminary
LINEAR INTEGRATED CIRCUIT
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
DESCRIPTION
UTC U3144 is a semiconductor integrated circuit utilizing the Hall effect. It has been so designed as to operate in the alternating magnetic field especially at low supply voltage and operation over extended temperature ranges to +85°С.This Hall IC is suitable for application to various kinds of sensors, contact-less switches, and the like.
FEATURES
* Wide temperature operation range of -20°С ~ +85°С * Wide supply voltage range of 4.5V to 24V * TTL and MOS IC are directly drivable by the output * Reverse Battery Protection * Activate wi.
Part Number |
U312 |
Manufacturers |
National Semiconductor |
Logo |
|
Description |
TRANSISTOR |
Datasheet |
U312 Datasheet (PDF) |
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Part Number |
U310 |
Manufacturers |
InterFET |
Logo |
|
Description |
N-Channel JFET |
Datasheet |
U310 Datasheet (PDF) |
InterFET
Product Folder
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U310
U310 N-Channel JFET
Features
• InterFET N0072L Geometry • Low Noise: 2 nV/√Hz Typical • Low Ciss: 4pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options.
Applications
• Mixers • Oscillators • VHF/UHF Amplifiers
Description
The -25V InterFET U310 JFET is targeted for higher gain VHF amplifiers, mixers, and oscillators. Gate leakages are typically less than 10pA at room temperatures.
Gate/Case Drain 2 Source
TO-52 Bottom View
3
1
Source 1 Drain 2
SOT23 Top View 3 Gate
TO-92 Bottom View
Gate 3 Drain 2 Source 1
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation C.
Part Number |
U310 |
Manufacturers |
Vishay |
Logo |
|
Description |
N-Channel JFETs |
Datasheet |
U310 Datasheet (PDF) |
J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J308 J309 J310 SST308 SST309 SST310 U309 U310
VGS(off) (V)
−1 to −6.5 −1 to −4 −2 to −6.5 −1 to −6.5 −1 to −4 −2 to −6.5 −1 to −4 −2.5 to −6
J308 J309 J310
SST308 SST309 SST310
U309 U310
V(BR)GSS Min (V)
−25 −25 −25 −25 −25 −25 −25 −25
gfs Min (mS)
8 10 8 8 10 8 10 10
IDSS Min (mA)
12 12 24 12 12 24 12 24
FEATURES
D Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation
BENEFITS
D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Sig.
n-channel JFET
n-channel JFET
designed for • • •
• VHF Amplifiers • Oscillators • Mixers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage -25 V
Gate Current . 10mA
Total Device Dissipation (Derate 1.7 mWrC) 300 mW
Storage Temperature Range .... -65 to +200°C
Lead Temperature (1/16" from case for 10 seconds)
...
300°C
H
Siliconix
-----
Performance Curves NZB See Section 4
BENEFITS • High Power Gain
16 dB Typ @ 105 MHz, CommonGate 11 dB Typ @450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ@ 105 MHz 2.7 dB Typ @450 MHz • Wide Dynamic Range-Greater than 100 dB
TO-72 See Section 6
o~: ~~
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
1-
2
1- S
3T
1- A
4T I-I
5C
i-
6
IGSS Gate Reverse Current
BVGSS Gate-Source Breakdown Voltage
VGS(off) Gate-Source Cutoff Voltage
lOSS
Saturation Drain Current (Note 1)
VGS(f) Gate·Source Forward Voltage
-7 B0
-Y
9N
'10
9fg gog Cgd Cgs
Common-Gate Forward Transconductance (Note 1) Common-Gate Output Conductance Gate·Dral" Capacitance Gate·Source Capacitance
Min
-25 -1 20
10.000
Max Typ Unit
Test Condition.
-150 -150
pA VGS=-15V.VOS=0
nA
150·C
IG = -lpA, VOS = 0 V -6 VOS= 10V,IO= 1 nA
no "If!. VDS=1QV,'lGS=O
1 V IG = 1 rnA, VOS = 0
17,000 pmho VOS = 10 V, 10 = 10 mA
250
if = 1 kHz
2.5
pF VOG= 10V,IO= 5mA
if= 1 MHz
5.0
NOTE: 1. Pulse test duration = 2 ms.
NZB
3-122
Siliconix
.
2019-09-21 : M3172 M3172F TMS664814 TMS626162A TMS626812 TMS626812A TMS626812B TMS664414 SN64S112 M955C