Ring Demodulator. U350 Datasheet

U350 Datasheet PDF


Part Number

U350

Description

N-Channel JFET Ring Demodulator

Manufacture

Siliconix

Total Page 2 Pages
Datasheet
Download U350 Datasheet


U350
U350
N-Channel JFET Ring Demodulator
The U350 is a set of four matched n-channel JFETs
connected as a ring demodulator. The matched
set of JFETs has low rOS(ON), high g fs, and square
law operation which gives high conversion gain and
a very high intermodulation intercept point. Best
device performance is in the HF-VHF frequency
range. The hermetic TO-99 package shields the die
set as well as lending itself to military processing.
H Silicanix
incorporated
PART
NUMBER
U350
V(BR)GSS gfs
MIN MIN
(V) (mS)
-25 10
IGSS
MAX
(nA)
-1
NF
TYP
(dB)
7
TO-99 (TO-78)
BOTTOM VIEW
1 GATE 1, GATE 3
2 DRAIN 1, DRAIN 4
3 SOURCE 1, SOURCE 2
4 GND & CASE
5 SOURCE 3, SOURCE 4
6 DRAIN 2, DRAIN 3
7 GATE 2, GATE 4
ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMIT
UNITS
Gate-Drain Voltage
Gate-Source Voltage
Forward Gate Current
Power Dissipation
Power Derating
Operating Junction Temperature
Storage Temperature
Lead Temperature
(1/16" from case for 10 seconds)
VGO
VGS
IG
Po
TJ
Tstg
TL
-25
-25
25
1
8
-55 to 150
-65 to 150
300
V
mA
W
mW/DC
DC
4-160

U350
.rSiliconix
~ incorporated
ELECTRICAL CHARACTERISTICS 1
PARAMETER
STATIC
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage4
Saturation Drain
Current3, 4
Gate Reverse
Current 4
Gate-Source
Forward Vo(tage 4
DYNAMIC
Common-Source
Forward
Transconductance 4
Common-Source
Output Conductance4
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Conversion Gain
Noise Figure
Intercept Point
SYMBOL
TEST CONDITIONS
V(BR)GSS
VGS(OFF)
I DSS
IGSS
VGS(F)
IG = -1.I1A, VDS = 0 V
VDS = 10 V, ID = 1 nA
VDS = 15 V, VGS = 0 V
VGS = -15 V
VDS = 0 V
I TA=125·C
IG = 1 rnA, VDS = 0 V
gls
gos
rDS(ON)
Cgs
Cgd
Go
NF
VDS = 10 V, ID = 10 rnA
f = 1 kHz
VGS = 0 V, ID = 0 rnA, f = 1kHz
VGS = -10 V, ID = 0 rnA
f = 1 MHz
VGD =-10V, Is =OmA
f = 1 MHz
VDS = 20 V, VGS = "2 VGS(OFF)
f = 100 MHz, RL = 1700 .n
See Figure 1
MATCHING
Saturation Drain
Current Ratl03
IDSS
IDSS
VDS = 15 V, VGS = 0 V
Transconductance
Ratio
Output Conductance Ratio
Gate-Source Cutoff
Voltage Ratio
.!!k
gls
Jl=
gos
VGS(OFF)
VGS(OFF)
VDS = 15 V, ID = 10 rnA
f = 1 kHz
VDS = 15 V, ID = 1 nA
NOTES:
1. T A = 25 ·C unless otherwise noted.
2. For design aid only, not subject to production testing.
3. Pulse test; PW = 300)J.s, duty cycle S 3%.
4. Other gate terminal clamped to -8 V.
TYp2
-35
-3
45
-0.002
-0.001
0.7
15
100
33
4
2
4
7
33
0.95
0.95
0.95
0.95
U350
LIMITS
U350
MIN
MAX UNIT
-25
-2 -6
V
24 60 rnA
-1 nA
-1 .I1A
1V
10 18 mS
150 .us
90 .n
5
pF
2.5
dB
I I IdBm
0.9 1
0.9 1
0.9 1
0.9 1
;4ii~IF
1111
Figure 1
~+-~~~~--~
[1C:~~~ LOCAL OSC
4-161


Features U350 N-Channel JFET Ring Demodulator The U350 is a set of four matched n-channe l JFETs connected as a ring demodulator . The matched set of JFETs has low rOS( ON), high g fs, and square law operatio n which gives high conversion gain and a very high intermodulation intercept p oint. Best device performance is in the HF-VHF frequency range. The hermetic T O-99 package shields the die set as wel l as lending itself to military process ing. H Silicanix incorporated PART NU MBER U350 V(BR)GSS gfs MIN MIN (V) (mS ) -25 10 IGSS MAX (nA) -1 NF TYP (dB) 7 TO-99 (TO-78) BOTTOM VIEW 1 GATE 1, GATE 3 2 DRAIN 1, DRAIN 4 3 SOURCE 1 , SOURCE 2 4 GND & CASE 5 SOURCE 3, SOU RCE 4 6 DRAIN 2, DRAIN 3 7 GATE 2, GATE 4 ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise noted) PARAMETERS/TE ST CONDITIONS SYMBOL LIMIT UNITS Ga te-Drain Voltage Gate-Source Voltage Fo rward Gate Current Power Dissipation Po wer Derating Operating Junction Tempera ture Storage Temperature Lead Temperature (1/16" from case for .
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