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UPA2200T1M

Renesas
Part Number UPA2200T1M
Manufacturer Renesas (https://www.renesas.com/)
Title N-CHANNEL MOS FET
Description The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications ...
Features • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A) • B...
Published Aug 3, 2015
Datasheet PDF File UPA2200T1M PDF File


UPA2200T1M
UPA2200T1M


Features

• Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
• Built-in gate protection diode
• 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT...



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