www.vishay.com
V12P12
Vishay General Semiconductor
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 6 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
FEATURES
Very low profile - typical height of 1.1 mm
Available
Ideal for automated placement
Trench MOS Schottky technology
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