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V20120S-E3

Vishay
Part Number V20120S-E3
Manufacturer Vishay
Description High Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 25, 2016
Datasheet PDF File V20120S-E3 PDF File

V20120S-E3
V20120S-E3


Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22...




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