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VB10170CHM3

Part Number	VB10170CHM3
Manufacturer	Vishay
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Detailed Description	VB10170C-E3, VB10170C-M3, VB10170CHM3 .vishay. Vishay General Semiconductor Dual High Voltage Trench MOS Barrie...
Published	Aug 22, 2017
Datasheet	VB10170CHM3 PDF File

Overview

VB10170C-E3, VB10170C-M3, VB10170CHM3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
57 V at IF = 2.
5 A TMBS ® TO-263AB K 2 1 VB10170C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A TJ max.
Package 2x5A 170 V 80 A 0.
65 V 175 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operat...

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