High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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VB20150S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5.0 A
TMBS ®
D2PAK (TO-263AB) K
A NC VB20150S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
Circuit configura...
