Features
� 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP13N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared ...
