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YJL02N10A

Part Number	YJL02N10A
Manufacturer	Yangzhou Yangjie
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Feb 26, 2019
Detailed Description	YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at ...
Datasheet	YJL02N10A PDF File

Overview

YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
5V) 100V 2A ＜280 mohm ＜300 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● MSL LEVEL1 Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B Junction and Storage Temperature Range ...

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