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YJL2312A

Part Number	YJL2312A
Manufacturer	Yangzhou Yangjie
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Mar 13, 2019
Detailed Description	YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at V...
Datasheet	YJL2312A PDF File

Overview

YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=4.
5V) ● RDS(ON)( at VGS=2.
5V) ● RDS(ON)( at VGS=1.
8V) 20V 6.
8A ＜18 mohm ＜22 mohm ＜39 mohm General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications ● PWM application ● Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State TA=70℃ @ Steady State VGS ID IDM ±10 6.
8 5.
4 27 V A A Total Power Dissipation @ TA=25℃ PD 1.
2 W Thermal Resistance Junction-to-Am...

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