| Part Number | GTVA126001EC |
| Manufacturer | MACOM |
| Title | 600W High Power RF GaN HEMT |
| Description | The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They... |
| Features |
• GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle • Output power P3dB = 600 W • Drain efficiency = 65% • Gain = 18 dB • Capable of withstanding a 10:1 load mism... |
| Published | May 9, 2024 |
| Datasheet |
 GTVA126001EC PDF File
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