2SC4508 Datasheet

2SC4508 NPN Transistor

·Fast switching speed ·Silicon NPN planar diffused planar transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

Features

ector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V MIN TYP. MAX UNIT 400 V 0.8 V 1.5 V 100 μA 100 μA 25 65 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are i.