HFP730 Datasheet

HFP730 N-Channel Enhancement Mode Field Effect Transistor

these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 5.5A, 400V, RDS(on) <1.0Ω@VGS = 10 V • Fast sw.

Features

5.5A, 400V, RDS(on) <1.0Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF730
• 1- G 2-D 3-S █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg —— Storage Temperature ------------------------------------------------------ - 55~150 ℃ T j —— Operating Junction Temperature -------------------------------------------------- 150 ℃ DataSheet4U.com V DSS —— Drain-Source Voltage ----------------------------------------------------------400V DataShee VDGR —— Drain-Gate Voltage (RGS=20kΩ) ---------------------------------------------------.