LBC856BLT1G Datasheet

LBC856BLT1G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applicati.

Features

e 25°C PD 300 2.4 Thermal Resistance, Junction to Ambient RqJA 417 Junction and Storage Temperature TJ, Tstg 1. FR
  –5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
  –55 to +150 Unit V V V mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT
  –23 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx 12 xx= Device Marking (See Table Below) Rev.O 1/7 LESHAN RADIO COMPANY, LTD. LBC857CLT1G Series S-LBC857CLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device LBC856ALT1G S-LBC856ALT1G LBC856ALT3G S-LBC856ALT3G LBC856BLT1G S-LBC856BLT1G LBC856BLT3G S-LBC856B.