IRG4IBC20FDPBF Datasheet

IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR

PD -94915A IRG4IBC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 .

Features

C
• Very Low 1.66V votage drop
• 2.5kV, 60s insulation voltage …
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 G kHz in resonant mode).
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes E n-channel
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM outline
• Lead-Free Fast CoPack IGBT VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimiz.