SMBJ17 Suppressors Datasheet

SMBJ17 Datasheet, PDF, Equivalent


Part Number

SMBJ17

Description

Transient Voltage Suppressors

Manufacture

Vishay

Total Page 6 Pages
Datasheet
Download SMBJ17 Datasheet


SMBJ17
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VWM
PPPM
IFSM (uni-directional only)
TJ max.
5.0 V to 188 V
600 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
IFSM
TJ, TSTG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 88392 For technical questions within your region, please contact one of the following:
Revision: 04-Sep-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

SMBJ17
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
UNI BI
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (µA) (3)
(+)SMBJ5.0
(+)SMBJ5.0A (5)
KD
KE
KD 6.40 7.82
KE 6.40 7.07
10
10
5.0
5.0
800
800
(+)SMBJ6.0
(+)SMBJ6.0A
(+)SMBJ6.5
(+)SMBJ6.5A
(+)SMBJ7.0
(+)SMBJ7.0A
(+)SMBJ7.5
KF KF 6.67 8.15
KG KG 6.67 7.37
KH AH 7.22 8.82
KK AK 7.22 7.98
KL KL 7.78 9.51
KM KM 7.78 8.60
KN AN 8.33 10.2
10
10
10
10
10
10
1.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
800
800
500
500
200
200
100
(+)SMBJ7.5A
(+)SMBJ8.0
(+)SMBJ8.0A
KP AP 8.33 9.21 1.0
KQ AQ 8.89 10.9 1.0
KR AR 8.89 9.83 1.0
7.5
8.0
8.0
100
50
50
(+)SMBJ8.5
(+)SMBJ8.5A
(+)SMBJ9.0
KS AS 9.44 11.5 1.0
KT AT 9.44 10.4 1.0
KU AU 10.0 12.2 1.0
8.5
8.5
9.0
20
20
10
(+)SMBJ9.0A
(+)SMBJ10
(+)SMBJ10A
(+)SMBJ11
KV AV 10.0 11.1
KW AW 11.1 13.6
KX AX 11.1 12.3
KY KY 12.2 14.9
1.0
1.0
1.0
1.0
9.0
10
10
11
10
5.0
5.0
5.0
(+)SMBJ11A
(+)SMBJ12
(+)SMBJ12A
(+)SMBJ13
(+)SMBJ13A
(+)SMBJ14
KZ KZ 12.2 13.5 1.0
LD BD 13.3 16.3 1.0
LE BE 13.3 14.7 1.0
LF LF 14.4 17.6 1.0
LG LG 14.4 15.9 1.0
LH BH 15.6 19.1 1.0
11
12
12
13
13
14
5.0
5.0
5.0
1.0
1.0
1.0
(+)SMBJ14A
(+)SMBJ15
(+)SMBJ15A
(+)SMBJ16
LK BK 15.6 17.2 1.0
LL BL 16.7 20.4 1.0
LM BM 16.7 18.5 1.0
LN LN 17.8 21.8 1.0
14
15
15
16
1.0
1.0
1.0
1.0
(+)SMBJ16A
(+)SMBJ17
(+)SMBJ17A
(+)SMBJ18
(+)SMBJ18A
(+)SMBJ20
LP LM 17.8 19.7 1.0
LQ LQ 18.9 23.1 1.0
LR LR 18.9 20.9 1.0
LS BS 20.0 24.4 1.0
LT BT 20.0 22.1 1.0
LU LU 22.2 27.1 1.0
16
17
17
18
18
20
1.0
1.0
1.0
1.0
1.0
1.0
(+)SMBJ20A
(+)SMBJ22
(+)SMBJ22A
(+)SMBJ24
(+)SMBJ24A
(+)SMBJ26
(+)SMBJ26A
(+)SMBJ28
(+)SMBJ28A
(+)SMBJ30
LV LV 22.2 24.5
LW BW 24.4 29.8
LX BX 24.4 26.9
LY BY 26.7 32.6
LZ BZ 26.7 29.5
MD CD 28.9 35.3
ME CE 28.9 31.9
MF MF 31.1 38.0
MG MG 31.1 34.4
MH CH 33.3 40.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
22
22
24
24
26
26
28
28
30
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(+)SMBJ30A
(+)SMBJ33
(+)SMBJ33A
(+)SMBJ36
(+)SMBJ36A
(+)SMBJ40
(+)SMBJ40A
MK CK 33.3 36.8
ML CL 36.7 44.9
MM CM 36.7 40.6
MN CN 40.0 48.9
MP CP 40.0 44.2
MQ CQ 44.4 54.3
MR CR 44.4 49.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
30
33
33
36
36
40
40
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
10.2
11.3
9.3
10.3
8.4
9.3
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88392
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 04-Sep-07


Features SMBJ5.0 thru SMBJ188CA Vishay General Se miconductor Surface Mount TRANSZORB® T ransient Voltage Suppressors DO-214AA (SMB J-Bend) PRIMARY CHARACTERISTICS VWM PPPM IFSM (uni-directional only) TJ max. 5.0 V to 188 V 600 W 100 A 150 C DEVICES FOR BI-DIRECTION APPLICATIO NS For bi-directional devices use C or CA suffix (e.g. SMBJ10CA). Electrical c haracteristics apply in both directions . FEATURES • Low profile package • Ideal for automated placement • Glas s passivated chip junction • Availabl e in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellen t clamping capability • Very fast res ponse time • Low incremental surge re sistance • Meets MSL level 1, per J-S TD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WE EE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load s.
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