PIN photodiode. S6432 Datasheet

S6432 photodiode. Datasheet pdf. Equivalent

Part S6432
Description Si PIN photodiode
Feature PHOTODIODE Si PIN photodiode S6431, S6432, S7481, S7482 High-speed detector with surface-mount pla.
Manufacture Hamamatsu
Datasheet
Download S6432 Datasheet

PHOTODIODE Si PIN photodiode S6431, S6432, S7481, S7482 Hi S6432 Datasheet
Recommendation Recommendation Datasheet S6432 Datasheet





S6432
PHOTODIODE
Si PIN photodiode
S6431, S6432, S7481, S7482
High-speed detector with surface-mount plastic package
S6431, S6432, S7481 and S7482 are high-speed APC detectors developed for monitoring laser diodes with a peak wavelength shorter than 700
nm. All types are designed for surface mount, and S6431 and S6432 have the terminals for positioning easily.
Features
l High-speed response at low reverse voltage
S6431, S7481 (φ0.8 mm) : 500 MHz Typ. (VR=2.5 V)
S6432, S7482 (φ0.6 mm) : 600 MHz Typ. (VR=2.5 V)
l S6431, S6432: Clear plastic package with wire
connection terminals (4 × 4.8 mm)
l High sensitivity: 0.48 A/W Typ. (λ=660 nm)
Applications
l Laser diode monitor of optical disk unit (high-speed APC)
l Sensor for red laser diode
s General ratings / Absolute maximum ratings
Type No.
S6431
S6432
S7481
S7482
Dimensional
outline
Package
Plastic
Active area
size
(mm)
φ0.8
φ0.6
φ0.8
φ0.6
Effective active
area
(mm2)
0.5
0.28
0.5
0.28
Absolute maximum ratings
Reverse Power Operating Storage
voltage dissipation temperature temperature
VR Max.
P
Topr
Tstg
(V)
(mV)
(°C)
(°C)
20 50 -25 to +85 -40 to +100
s Electrical and optical characteristics
Type No.
Spectral Peak
response sensitivity
range wavelength
λ λp
(nm) (nm)
Photo sensitivity
S
(A/W)
λp
660 780 830
nm nm nm
Short
circuit
current
Isc
100 lx
Dark
current
ID
VR=2.5 V
Temp.
coefficient
of
ID
TCID
Cut-off
frequency
fc
VR=2.5 V
RL=50
Typ. Max.
Min. Typ.
(µA) (nA) (nA) (times/°C) (MHz) (MHz)
Terminal
capacitance
Ct
VR=2.5 V
f=1 MHz
Typ. Max.
(pF) (pF)
NEP
VR=2.5 V
(W/Hz1/2)
S6431
0.48 300 500 6 12
S6432
S7481
320 to
1000
760
0.5
0.48
0.5
0.45
0.25
0.48
0.01 0.3
1.15
400 600
300 500
3
6
6
12
3.6 × 10-15
S7482
0.25 400 600 3 6
*1: λ=680 nm



S6432
Si PIN photodiode S6431, S6432, S7481, S7482
s Spectral response
0.6
0.5
(Typ. Ta=25 ˚C)
s Dark current vs. reverse voltage
10 pA
S6431, S7481
(Typ. Ta=25 ˚C)
0.4 1 pA
0.3
S6432, S7482
0.2 100 fA
0.1
0
200 400 600 800 1000
WAVELENGTH (nm)
10 fA
0.01
0.1 1
10
REVERSE VOLTAGE (V)
100
KPINB0171EA
KPINB0172EA
s Dark current temperature characteristics
10 nA
(Typ. VR=2.5 V)
s Terminal capacitance vs. reverse voltage
10 pF
(Typ. Ta=25 ˚C, f=1 MHz)
1 nA
100 pA
10 pA
S6431, S7481
S6432, S7482
S6431, S7481
S6432, S7482
1 pA
100 fA
-20
0 20 40 60
AMBIENT TEMPERATURE (˚C)
80
1 pF
0.1
1 10
REVERSE VOLTAGE (V)
100
KPINB0173EA
KPINB0174EA





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