POWER MOSFET. AP09N90W-HF Datasheet

AP09N90W-HF MOSFET. Datasheet pdf. Equivalent

Part AP09N90W-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP09N90W-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER .
Manufacture Advanced Power Electronics
Datasheet
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Advanced Power Electronics Corp. AP09N90W-HF Halogen-Free P AP09N90W-HF Datasheet
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AP09N90W-HF
Advanced Power
Electronics Corp.
AP09N90W-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche test
D
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP09N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage
applications such as SMPS.
BVDSS
RDS(ON)
ID
G
D
S
900V
1.2Ω
8.6A
TO-3P
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
900
+30
8.6
5
30
240
1.92
18
-55 to 150
-55 to 150
V
V
A
A
A
W
W/
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
0.52
40
Units
/W
/W
1
201501124



AP09N90W-HF
AP09N90W-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Static Drain-Source On-Resistance3 VGS=10V, ID=4.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=4.5A
Drain-Source Leakage Current
VDS=720V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=720V, VGS=0V
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
VGS=+30V, VDS=0V
ID=8.6A
VDS=540V
VGS=10V
VDD=450V
ID=5A
RG=10Ω
VGS=10V
VGS=0V
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
900 -
-
- - 1.2
2-4
- 11.5 -
- - 100
- - 500
- - +100
- 67 120
- 17 -
- 20 -
- 26 -
- 10 -
- 300 -
- 540 -
- 4100 6560
- 220 -
- 50 -
V
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=8.6A, VGS=0V
Min. Typ. Max. Units
- 8.6 A
- - 30 A
- - 1.5 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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