POWER MOSFET. AP10P10GK-HF Datasheet

AP10P10GK-HF MOSFET. Datasheet pdf. Equivalent

Part AP10P10GK-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature Advanced Power Electronics Corp. AP10P10GK-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER.
Manufacture Advanced Power Electronics
Datasheet
Download AP10P10GK-HF Datasheet

Advanced Power Electronics Corp. AP10P10GK-HF Halogen-Free AP10P10GK-HF Datasheet
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AP10P10GK-HF
Advanced Power
Electronics Corp.
AP10P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
Description
AP10P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
BVDSS
RDS(ON)
ID
G
-100V
500mΩ
- 1.65A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 100
+20
- 1.65
-1.3
-6
2.78
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Unit
/W
1
201211021



AP10P10GK-HF
AP10P10GK-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-1.5A
VGS=-4.5V, ID=-1A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-1.5A
VDS=-80V, VGS=0V
VGS=+20V, VDS=0V
ID=-1.5A
VDS=-50V
VGS=-4.5V
VDS=-50V
ID=-1A
RG=3.3Ω
VGS=-10V
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
-100 -
-V
- - 500 mΩ
- - 600 mΩ
-1 - -3 V
-4-S
- - -25 uA
- - +100 nA
- 5.5 8.8 nC
- 1.2 - nC
- 2.5 - nC
- 7.3 - ns
- 5 - ns
- 17 - ns
- 4.4 - ns
- 440 704 pF
- 45 - pF
- 30 - pF
- 15 30 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-2.1A, VGS=0V
IS=-1A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 27 - ns
- 27 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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