NON-VOLATILE RAM. GR12883 Datasheet

GR12883 RAM. Datasheet pdf. Equivalent

Part GR12883
Description NON-VOLATILE RAM
Feature DESCRIPTION The GR12883 is a 131072 word by 8 bits (128K x 8) non-volatile CMOS Static Ram, fabricat.
Manufacture Greenwich
Datasheet
Download GR12883 Datasheet

DESCRIPTION The GR12883 is a 131072 word by 8 bits (128K x 8 GR12883 Datasheet
Recommendation Recommendation Datasheet GR12883 Datasheet





GR12883
DESCRIPTION
The GR12883 is a 131072 word by 8 bits (128K x 8)
non-volatile CMOS Static Ram, fabricated from
advanced silicon gate CMOS technology and a high
reliability lithium power cell.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR12883 is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by the
lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15 microseconds)
to power down from 5 volts to 0 volts. This is much faster
than system power failure conditions. Therefore there
are no special conditions required when installing the
GR12883.
The GR12883 can, without external power, retain data
almost indefinitely. The limiting factor will be the shelf
life of the lithium cell, which is typically ten years. It is
possible that this figure may be extended in view of the
extremely light duty imposed upon the cell.
APPLICATION
When powered down, the GR12883 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data collection
in data loggers, program changes in process control,
automation and robotics and user definable lookup
tables, etc.
DISPOSAL INSTRUCTIONS
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., for disposal.
DIMENSIONS (mm)
< 43.5 > < 18 >
> < 0.5
> <2.5
13
4 > < 0.38
< 15.24 >
UK
Greenwich Instruments Ltd.,
Meridian House, Park Road,
Swanley, Kent. BR8 8AH
Tele: 08700 505 404
Fax: 08700 505 405
Greenwich Instruments Ltd., are continually developing their products and reserve the
right to alter specifications without prior notice. Standard Terms and Conditions of Sale
GR12883 (128K x 8)
NON-VOLATILE RAM
http://www.greenwichinst.co.uk
ISSUE 3 JAN 2006



GR12883
GR12883 NON-VOLATILE RAM
Symbol
Vdd
Vi/o
Temp
ABSOLUTE MAXIMUM RATINGS
Min
– 0.3
– 0.3
– 20
Max
7.0
Vdd + 0.3
+ 70
Units
Volts
Volts
deg. C
OPERATING CONDITIONS
Symbol
Min Typ Max
Vdd
4.75 5.0
5.5
VTH
4.5
Vin (1)
2.2
Vin (0)
0.8
lin (CE)
1.0
Iin (any other pin) – 1.0
+ 1.0
Vout (1)(Iout = –1mA) 2.4
Vout (0)(Iout = +2mA)
0.4
Idd (Active)
30
Idd (Deselected)
1.0
Tcycle
100
Cin (any pin)
10
Unit
Volts
Volts
Volts
Volts
LSTTL Load
µA.
Volts
Volts
mA.
mA.
nS.
pF
OPERATING MODE
CE OE WR MODE D0 - D7 ldd
H
X
X
Unsel. Hi-Z
Deselected
L
H
H
Unsel. Hi-Z
Active
L
L
H
Read Dout
Active
L X L Write Din Active
PIN CONNECTIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 Vdd
31 A15
30 CE2
29 WR
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE1
21 D7
20 D6
19 D5
18 D4
17 D3
PIN DESIGNATIONS
Pin Function
A0-A16 Address I/P`s
D0-D7 Data in/out
OE Output Enable
CE1CE 2 Chip Enable
WR Write Enable
Vdd +5Volt Power
GND Ground
NC No Connect
REPLACES
HM628128., M5M51008.
Address
CE
OE
D OUT
Address
CE
WE
D OUT
D IN
Address
CE
WE
D OUT
D IN
READ CYCLE
t RC
<
>
<
t ACC
< t ACS
>
>
< t OE >
t
<
C>LZ><t OLZ
t OH> <
t CHZ
<
>
< t OHZ
>
WRITE CYCLE 1
t WC
<
>
<t AS>
< t WP >
< t WR >
t WHZ>
< < t OW >
< t DS>< t DH>
WRITE CYCLE 2
< t WC
>
<t AS>
< t WP >< t WR >
t WHZ>
<
< t DS >< tDH>
TIMING (nS-nano seconds)
Read Cycle
100nS
Symbol
t RC
t ACC
t ACS
t OE
t CLZ
t OLZ
t OH
t CHZ
t OHZ
Parameter
Read cycle time
Access time
CE to output valid
OE to output valid
CE to output active
OE to output active
Output hold time
CE to output disable
OE to output disable
Min Max
100
100
100
50
5
5
10
35
35
Write Cycle
100nS
Symbol
t WC
t WP
t AS
t WR
t WHZ
t OW
t DS
t DH
Parameter
Write cycle time
Write pulse width
Address setup time
Write recovery time
WR to output disable
Output active from WR
Data setup time
Data HOLD TIME
Min Max
100
75
0
0
35
5
40
0
Notes
1.WE must be high during address transitions.
2.A Write occurs during the overlap of a low CE1, a high
CE2 and a low WE.
3.WE is high for a read cycle.
DATA RETENTION OPERATING CONDITIONS
Vdd < tF >
< tR >
VTH
3.2V
0V
tPD
><
>
t
<
REC
< t DR
>
Symbol Parameter
Min Typ Max Units
Vdd Operating supply voltage
4.75 5.0 5.50 Volts
VTH
tF
tR
t REC
t DR
t PD
Data retention voltage
Vdd slew to 0V
15
Vdd slew 0V to 5.0V
15
CE to O/P valid from power up
Data retention time
CE at Vin(1) before power down 0
4.5
10
Volts
µS
µS
15 µS
Years
µS





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