Mode MOSFET. SM1A10NSU Datasheet

SM1A10NSU MOSFET. Datasheet pdf. Equivalent

Part SM1A10NSU
Description N-Channel Enhancement Mode MOSFET
Feature SM1A10NSU Features · 100V/10A, RDS(ON)=175mW (max.) @ VGS=10V RDS(ON)=235mW (max.) @ VGS=4.5V · ESD .
Manufacture Sinopower
Datasheet
Download SM1A10NSU Datasheet

SM1A10NSU Features · 100V/10A, RDS(ON)=175mW (max.) @ VGS=10 SM1A10NSU Datasheet
Recommendation Recommendation Datasheet SM1A10NSU Datasheet




SM1A10NSU
SM1A10NSU
Features
· 100V/10A,
RDS(ON)=175mW (max.) @ VGS=10V
RDS(ON)=235mW (max.) @ VGS=4.5V
· ESD Protected
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in TV Inverter.
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of TO-252-3
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1A10NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM1A10NS U :
SM1A10N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
1
www.sinopowersemi.com



SM1A10NSU
SM1A10NSU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy, L=0.3mH
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
®
Rating
100
±20
175
-55 to 175
3
35
25
10
7
60
30
2.5
50
15
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
SM1A10NSU
Unit
Min. Typ. Max.
VGS=0V, IDS=250mA
100 -
-V
VDS=80V, VGS=0V
TJ=85°C
-
-
-1
- 30 mA
VDS=VGS, IDS=250mA
1 2 3V
VGS=±16V, VDS=0V
- - ±10 mA
VGS=10V, IDS=3A
VGS=4.5V, IDS=1A
- 135 175
- 180 235 mW
ISD=3A, VGS=0V
- 0.8 1.1 V
- 36 - ns
IDS=5A, dlSD/dt=100A/ms - 49 - nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
2
www.sinopowersemi.com





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