Transistor. RTE13LFM Datasheet

RTE13LFM Transistor. Datasheet pdf. Equivalent

Part RTE13LFM
Description Transistor
Feature PRELIMINARY DESCRIPTION RTE13LFM is compound transistor built with 2SC3052 chip and 8.2V Zener diod.
Manufacture Isahaya Electronics Corporation
Datasheet
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PRELIMINARY DESCRIPTION RTE13LFM is compound transistor bui RTE13LFM Datasheet
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RTE13LFM
PRELIMINARY
DESCRIPTION
RTE13LFM is compound transistor built with 2SC3052 chip
and 8.2V Zener diode in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
OUTLINE DRAWING
APPLICATION
Power supply circuit, Driver circuit, etc
RTE13LFM
Composite Transistor
Zener Diode
Silicon NPN Epitaxial Type
Unit:mm
2.1
1.25
⑥⑤④
Di
Tr
①②③
電極接続
①:ANODE
②:NC
③:COLLECTOR
④:EMITTER
⑤:BASE
⑥:CATHODE
JEITA:SC-88
JEDEC:-
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Total power dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
50
50
Tr 6
200
Tr 150
Di +150
Common -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
【 Tr 】
UNIT
V
V
V
mA
mW
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO Collector to Emitter break down voltage
IC=100µA, RBE=∞
ICBO Collector cut off current
VCB=50V, IE=0A
IEBO Emitter cut off current
VEB=6V, IC=0A
hFE DC forward current gain
VCE=6V, IC=1mA
hFE DC forward current gain
VCE=6V, IC=0.1mA
VCE(sat) Collector to Emitter saturation voltage
IC=100mA, IB=10mA
fT Gain band width product
VCE=6V, IE=-10mA
Cob Collector output capacitance
VCB=6V, IE=0A, f=1MHz
【 Di 】
Zener voltage VZ(V)
Reverse current IR(µA)
MIN
MAX
IZ(mA)
MAX
VR(V)
7.790
8.610
5
0.5 6.5
MARKING
⑥⑤④
X01
①②③
LIMITS
MIN TYP MAX
50 -
-
- - 0.1
- - 0.1
250 - 500
90 -
-
- - 0.3
- 200 -
- 2.5 -
UNIT
V
µA
µA
-
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION



RTE13LFM
PRELIMINARY
【Tr】TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
50
40
30
20
10
Ta=25℃
0
012345
COLLECTOR TO EMITTER VOLTAGE VCE (V)
10000
hFE-IC
VCE=6V
1000
100
Ta=85℃
25℃
-40℃
RTE13LFM
Composite Transistor
Zener Diode
Silicon NPN Epitaxial Type
COMMON EMITTER TRANSFER
100
VCE=6V
10
1
0.1
0
0.2 0.4 0.6 0.8
BASE TO EMITTER VOLTAGE VBE (V)
1
VCE(sat)-IC
1000
100
Ta=85℃
-40℃
10
10
0.1
1 10 100
COLLECTOR CURRENT IC (mA)
1000
250
Ta=25℃
VCE=6V
200
fT-IE
150
100
50
0
-0.1
-1 -10
EMITTER CURRENT IE (mA)
-100
1
0.1 1 10 100
COLLECTOR CURRENT (mA)
100
Ta=25℃
IE=0A
f=1MHz
10
Cob-VCB
1000
1
0.1
0.1
1 10
COLLECTOR TO BASE VCB (V)
100
ISAHAYA ELECTRONICS CORPORATION





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