Triac. BCR4AS-16LH Datasheet

BCR4AS-16LH Triac. Datasheet pdf. Equivalent

Part BCR4AS-16LH
Description Triac
Feature BCR4AS-16LH Triac Medium Power Use Features • IT (RMS) : 4 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III.
Manufacture Renesas
Datasheet
Download BCR4AS-16LH Datasheet

BCR4AS-16LH Triac Medium Power Use Features • IT (RMS) : 4 A BCR4AS-16LH Datasheet
Recommendation Recommendation Datasheet BCR4AS-16LH Datasheet




BCR4AS-16LH
BCR4AS-16LH
Triac
Medium Power Use
Features
IT (RMS) : 4 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1)
High Commutation
Preliminary Datasheet
R07DS0331EJ0100
Rev.1.00
Apr 28, 2011
The Product guaranteed maximum junction
temperature 150°C
Non-Insulated Type
Planar Type
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
12 3
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Switching mode power supply, small motor control, heater control, and other general purpose AC power control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
4
30
3.7
3
0.3
10
2
–40 to +150
–40 to +150
0.32
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 129°C Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
R07DS0331EJ0100 Rev.1.00
Apr 28, 2011
Page 1 of 6



BCR4AS-16LH
BCR4AS-16LH
Preliminary
Electrical Characteristics
Parameter
BCR4AS-16LH-1
Symbol
(IGT item : 1)
BCR4AS-16LH
Unit Test conditions
Min. Typ. Max. Min. Typ. Max.
Repetitive peak off-state current IDRM — — 2.0 — — 2.0 mA Tj = 150°C
VDRM applied
On-state voltage
VTM — — 1.6 — — 1.6 V Tc = 25°C, ITM = 6 A
instantaneous
measurement
Gate trigger voltageNote2
Ι VFGTΙ
— 1.5 —
— 1.5 V Tj = 25°C, VD = 6 V
ΙΙ VRGTΙ — — 1.5 — — 1.5 V RL = 6 Ω, RG = 330 Ω
Gate trigger curentNote2
ΙΙΙ VRGTΙΙΙ — — 1.5 — — 1.5 V
Ι
IFGTΙ
10
35 mA Tj = 25°C, VD = 6 V
ΙΙ IRGTΙ — — 10 — — 35 mA RL = 6 Ω, RG = 330 Ω
ΙΙΙ IRGTΙΙΙ
10
35 mA
Gate non-trigger voltage
VGD 0.2 — — 0.2 — — V Tj = 125°C
VD = 1/2 VDRM
0.1 — — 0.1 — — V Tj = 150°C
Thermal resistance
Rth (j-c)
— 3.8 —
VD = 1/2 VDRM
— 3.8 °C/W Junction to caseNote3
Critical-rate of decay of on-state (di/dt)c 2.5 — — — — — A/ms Tj = 125°C
commutating current Note4
(dv/dt)c < 10 V/μs
— — — 3.0 — — A/ms Tj = 125°C
(dv/dt)c < 100 V/μs
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of decay of on-state commutating current is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Peak off-state voltage
VD = 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 10 V/μs (IGT item : 1)
(dv/dt)c < 100 V/μs
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0331EJ0100 Rev.1.00
Apr 28, 2011
Page 2 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)