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NP55N04SLG

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MOS FIELD EFFECT TRANSISTOR


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NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Channel temperature 175 degree rating Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2...



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NP55N04SLG

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