RJK0330DPB-01
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 2.1 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
4 G
Preliminary Datasheet
R07DS02...
