STS20N3LLH6
N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STS20N3LLH6
30 V 0.0047 Ω 20 A
t(s)■ RDS(on) * Qg industry benchmark uc■ Extremely low on-resistance RDS(on) d■ High avalanche ruggedness ro■ Low gate drive power losses P■ Very low switching gate charge
leteApplication
so■ Switchin...
