Barrier Diode. SDB310Q Datasheet

SDB310Q Diode. Datasheet pdf. Equivalent


Part SDB310Q
Description Schottky Barrier Diode
Feature Semiconductor Features • Low power rectified • Silicon epitaxial type • High reliability Ordering .
Manufacture AUK
Datasheet
Download SDB310Q Datasheet


Semiconductor Features • Low power rectified • Silicon epit SDB310Q Datasheet
SDB310Q SCHOTTKY BARRIER DIODE Features • Low power rectifie SDB310Q Datasheet
Recommendation Recommendation Datasheet SDB310Q Datasheet




SDB310Q
Semiconductor
Features
Low power rectified
Silicon epitaxial type
High reliability
Ordering Information
Type No.
Marking
SDB310Q
S2
Outline Dimensions
Package Code
SOD-523
1.50~1.70
1.10~1.30
21
CATHODE MARK
SDB310Q
Schottky Barrier Diode
unit : mm
21
PIN Connections
1. Anode
2. Cathode
KSD-E002-001
1



SDB310Q
SDB310Q
Absolute maximum ratings
Characteristic
Symbol
Ratings
Ta=25°C
Unit
Reverse voltage
VR 30
Repetitive peak forward current
IFRM*
0.5
Forward current
IF 0.2
Non-repetitive peak forward current(10ms)
IFSM
2
Power dissipation
PD 150
Junction temperature
Tj 150
Storage temperature
* : δ = D/T =0.33
(T<1S)
Tstg -55 ~ 150
* : Unit ratings. Total rating=Unit rating×1.5
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Forward voltage 1
VF(1)
IF=10mA
-
Forward voltage 2
VF(2)
IF=30mA
-
Reverse current
IR VR=30V
-
Total capacitance
CT VR=1V, f=1MHz
-
Reverse recovery time
trr
IF= IR=10mA, IRR= 1mA, RL=100
-
Typ.
-
-
-
-
-
V
A
A
A
mW
°C
°C
Ta=25°C
Max. Unit
0.4 V
0.5 V
1 µA
10 pF
5 ns
KSD-E002-001
2







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