BARRIER DIODE. SDB310Q Datasheet

SDB310Q DIODE. Datasheet pdf. Equivalent


Part SDB310Q
Description SCHOTTKY BARRIER DIODE
Feature SDB310Q SCHOTTKY BARRIER DIODE Features • Low power rectified • Silicon epitaxial type • High reliab.
Manufacture SEMTECH
Datasheet
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SDB310Q
SDB310Q
SCHOTTKY BARRIER DIODE
Features
• Low power rectified
• Silicon epitaxial type
• High reliability
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
at IF = 30 mA
Reverse Current
at VR = 30 V
Total Capacitance
at VR = 1 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, IRR = 1 mA, RL = 100
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
G
Top View
Marking Code: "G"
Simplified outline SOD-523 and symbol
Symbol
VR
IF
IFRM
IFSM
PD
Tj
Ts
Value
30
0.2
0.5
2
150
150
- 55 to + 150
Unit
V
A
A
A
mW
OC
OC
Symbol
VF
IR
CT
trr
Max.
0.4
0.5
1
10
5
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006



SDB310Q
SDB310Q
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006







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