Schottky Diodes. SD103AWS Datasheet

SD103AWS Diodes. Datasheet pdf. Equivalent


Part SD103AWS
Description Small Signal Schottky Diodes
Feature www.vishay.com SD103AWS, SD103BWS, SD103CWS Vishay Semiconductors Small Signal Schottky Diodes ME.
Manufacture Vishay
Datasheet
Download SD103AWS Datasheet


NEW PRODUCT NEW PRODUCT NEW PRODUCT SD103AWS THRU SD103CW SD103AWS Datasheet
Product Summary VR(V) 20 30 40 IF (mA) 20 VF MAX (V) @ +2 SD103AWS Datasheet
SD103AWS, SD103BWS, SD103CWS SURFACE MOUNT SCHOTTKY BARRIER SD103AWS Datasheet
UNISONIC TECHNOLOGIES CO., LTD SD103AWS SCHOTTKY BARRIER SWI SD103AWS Datasheet
SD103AWS/SD103BWS SD103CWS Surface Mount Schottky Barrier D SD103AWS Datasheet
SMD Type Diodes SURFACE MOUNT SCHOTTKY BARRIER DIODE SD103 SD103AWS Datasheet
SD103AWS Elektronische Baue lemente THRU SD103CWS VOLTAGE SD103AWS Datasheet
RoHS SD103AWS-SD103CWS DFeatures · Low Forward Voltage Drop SD103AWS Datasheet
MCC TM Micro Commercial Components   ompone SD103AWS Datasheet
SD103AWS/SD103BWS/SD103CWS Schottky Barrier Diode FEATURES SD103AWS Datasheet
Recommendation Recommendation Datasheet SD103AWS Datasheet




SD103AWS
www.vishay.com
SD103AWS, SD103BWS, SD103CWS
Vishay Semiconductors
Small Signal Schottky Diodes
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected by
a PN junction guard ring
• The low forward voltage drop and fast
switching make it ideal for protection of MOS
devices, steering, biasing, and coupling
diodes for fast switching and low logic level
applications
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
SD103AWS
SD103BWS
SD103CWS
ORDERING CODE
SD103AWS-E3-08 or SD103AWS-E3-18
SD103AWS-HE3-08 or SD103AWS-HE3-18
SD103BWS-E3-08 or SD103BWS-E3-18
SD103BWS-HE3-08 or SD103BWS-HE3-18
SD103CWS-E3-08 or SD103CWS-E3-18
SD103CWS-HE3-08 or SD103CWS-HE3-18
CIRCUIT
CONFIGURATION
Single
Single
Single
TYPE MARKING
S6
S7
S8
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Power dissipation (1)
Single cycle surge
10 μs square wave
SD103AWS
SD103BWS
SD103CWS
VRRM
VRRM
VRRM
IF
Ptot
IFS;M
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
40
30
20
350
200
2
UNIT
V
V
V
mA
mW
A
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Operating temperature range
Storage temperature range
RthJA
Tj
Top
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
500
125
-55 to +125
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 2.2, 01-Jun-17
1 Document Number: 85682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



SD103AWS
www.vishay.com
SD103AWS, SD103BWS, SD103CWS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
VR = 30 V
VR = 20 V
VR = 10 V
IF = 20 mA
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
SD103AWS
SD103BWS
SD103CWS
IR
IR
IR
VF
VF
CD
trr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
100 100
10 10
11
Tamb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.1 0.1
0.01
0 0.2 0.4 0.6 0.8 1.0
18488
VF - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
5
4 tp = 300 ms
duty cycle = 2 %
3
2
100
10
1
0
0
18489
0.5 1.0
VF - Forward Voltage (V)
1.5
Fig. 2 - Typical High Current Forward Conduction Curve
1
0 10 20 30 40 50
18491
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 2.2, 01-Jun-17
2 Document Number: 85682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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