Power MOSFET. SMK1080FD Datasheet

SMK1080FD MOSFET. Datasheet pdf. Equivalent


Part SMK1080FD
Description Advanced N-Ch Power MOSFET
Feature SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source break.
Manufacture KODENSHI
Datasheet
Download SMK1080FD Datasheet


SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR AP SMK1080FD Datasheet
SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR AP SMK1080FD Datasheet
Recommendation Recommendation Datasheet SMK1080FD Datasheet




SMK1080FD
SMK1080FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS=800V
Low gate charge: Qg=58nC (Typ.)
Low drain-source On resistance: RDS(on)=1.1(Max.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK1080FD
SMK1080
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK
SMΔKY1YM0MD8DD0D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) YMDD
-. : Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating
800
30
10
6.32
40
800
10
4.8
48
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Rev. date: 14-NOV-12
KSD-T0O113-000
www.auk.co.kr
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SMK1080FD
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SMK1080FD
Rating
Max. 2.6
Max. 62.5
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
ID=250uA, VDS=VGS
VDS=800V, VGS=0V
VDS=640V, Tc=125C
VDS=0V, VGS=30V
VGS=10V, ID=5A
VDS=40V, ID=5A
VDS=25V, VGS=0V,
f=1.0MHz
VDD=400V, ID=10A,
RG=25
VDS=640V, VGS=10V,
ID=10A
Min.
800
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-5
-1
- 100
- 100
0.93 1.1
5.8 -
2630 -
192 -
18 -
50 -
130 -
90 -
80 -
58 -
21 -
18 -
Unit
V
V
uA
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=10A
trr IS=10A, VGS=0V
Qrr dIF/dt=100A/us
- - 10
- - 40
- - 1.4
- 650 -
- 10.9 -
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=15mH, IAS=10A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width300us, Duty cycle2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 14-NOV-12
KSD-T0O113-000
www.auk.co.kr
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