Power MOWFET. SNN01Z10Q Datasheet

SNN01Z10Q MOWFET. Datasheet pdf. Equivalent


Part SNN01Z10Q
Description Logic level N-CH Power MOWFET
Feature SNN01Z10Q Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level .
Manufacture KODENSHI
Datasheet
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SNN01Z10Q Logic Level N-Ch Power MOSFET Logic Level Gate Dr SNN01Z10Q Datasheet
Recommendation Recommendation Datasheet SNN01Z10Q Datasheet




SNN01Z10Q
SNN01Z10Q
Logic Level N-Ch Power MOSFET
Logic Level Gate Drive Application
Features
Logic level gate drive
Max. RDS(ON) = 0.24Ω at VGS = 10V, ID = 0.5A
Low RDS(on) provides higher efficiency
ESD protected: 2000V (HBM: ±1000V)
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
SNN01Z10Q
SNN01Z10Q
SOT-223
G
DS
D
SOT-223
Marking Information
SNN01Z10Q
YWW
Column 1: Device Code
Column 2: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25°C
Tc=100°C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating
100
±20
1
0.63
4
35
1
0.18
1.8
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
°C
°C
Rev. date: 24-NOV-11
KSD-T5A011-000
www.auk.co.kr
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SNN01Z10Q
Thermal Characteristics
Characteristic
Thermal resistance, junction to ambient
Symbol
Rth(j-a)
* When mounted on the minimum pad size recommended (PCB).
Electrical Characteristics (Tj=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0V
ID=250uA, VDS=VGS
VDS=100V, VGS=0V
VDS=0V, VGS=±20V
VGS=10V, ID=0.5A
VGS=4.5V, ID=0.5A
VDS=10V, ID=0.5A
VDS=25V, VGS=0V,
f=1MHz
VDD=50V, ID=1A,
RG=25
VDS=80V, VGS=10V,
ID=1A
SNN01Z10Q
Rating
Max. 69
Unit
°C/W
Min.
100
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
- 2.5
-1
- ±10
0.18 0.24
0.20 0.27
3-
315 445
36 71
22 43
3-
3.8 -
10.6 -
4.8 -
8 10
1-
2-
Unit
V
V
uA
uA
Ω
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=1A
trr IF=1A, VGS=0V
Qrr dIF/dt=100A/us
--1
--4
- - 1.2
- 25 -
- 18.8 -
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=35mH, IAS=1A, VDD=50V, RG=25Ω, Starting TJ=25°C\
3. Pulse test: Pulse width300us, Duty cycle2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 24-NOV-11
KSD-T5A011-000
www.auk.co.kr
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