PowerTrench MOSFETs. FDMC7200 Datasheet

FDMC7200 MOSFETs. Datasheet pdf. Equivalent


Part FDMC7200
Description Dual N-Channel PowerTrench MOSFETs
Feature FDMC7200 Dual N-Channel PowerTrench® MOSFET FDMC7200 June 2009 Dual N-Channel PowerTrench® MOSFET.
Manufacture Fairchild Semiconductor
Datasheet
Download FDMC7200 Datasheet


FDMC7200 Dual N-Channel PowerTrench® MOSFET FDMC7200 June FDMC7200 Datasheet
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Recommendation Recommendation Datasheet FDMC7200 Datasheet




FDMC7200
FDMC7200
June 2009
Dual N-Channel PowerTrench® MOSFET
30 V, 12 mand 23.5 m
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 23.5 mat VGS = 10 V, ID = 6 A
„ Max rDS(on) = 38 mat VGS = 4.5 V, ID = 5 A
Q2: N-Channel
„ Max rDS(on) = 12 mat VGS = 10 V, ID = 8 A
„ Max rDS(on) = 18 mat VGS = 4.5 V, ID = 7 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
„ Mobile Computing
„ Mobile Internet Devices
„ General Purpose Point of Load
Pin 1
D1
D1
D1
G1
D1
D2/S1
S2
S2
S2
G2
VIN
VIN VIN
GHS
VIN
SWITCH
NODE
GND GND GND
GLS
BOTTOM
BOTTOM
Power 33
S2 5
S2 6
S2 7
G2 8
Q2
4 D1
3 D1
2 D1
Q1 1 G1
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
88
20 40
6 1a
8 1b
40
1.9 1a
0.7 1c
40
2.2 1b
0.9 1d
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
65 1a
180 1c
7.5
55 1b
145 1d
4
°C/W
Device Marking
FDMC7200
Device
FDMC7200
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7200 Rev.D1
1
www.fairchildsemi.com



FDMC7200
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VDS = 20 V, VGS = 0 V
On Characteristics
VGS(th)
VGS(th)
TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 µA
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 6 A, TJ = 125 °C
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 7 A
VGS = 10 V, ID = 8 A, TJ = 125 °C
VDD = 5 V, ID = 6 A
VDD = 5 V, ID = 8 A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
Q2
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V Q1:
VDD = 15 V,
VGS = 0 V to 4.5 V ID = 6 A,
Q2:
VDD = 15 V,
ID = 8 A,
Type Min Typ Max Units
Q1 30
Q2 30
V
Q1
Q2
14
14
mV/°C
Q1
Q2
1
1
µA
Q1 100 nA
Q2 100 nA
Q1 1.0 2.3 3.0
Q2 1.0 2.3 3.0
V
Q1
Q2
-5
-6
mV/°C
19 23.5
Q1 28 38
29 35.5
m
10 12
Q2 13 18
15 18
Q1 29
Q2 56
S
Q1
Q2
495 660
1180 1570
pF
Q1
Q2
145 195
330 440
pF
Q1
Q2
20
30
30
45
pF
Q1 1.4
Q2 1.4
Q1
Q2
11
13
20
23
ns
Q1
Q2
3.1
4
10
10
ns
Q1
Q2
35
38
56
60
ns
Q1
Q2
1.3
6
10
12
ns
Q1
Q2
7.3
16
10
22
nC
Q1
Q2
3.1
7
4.3
10
nC
Q1
Q2
1.8
4.1
nC
Q1
Q2
1
1.5
nC
©2009 Fairchild Semiconductor Corporation
FDMC7200 Rev.D1
2
www.fairchildsemi.com







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