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B5817W

WEJ

SCHOTTKY BARRIER DIODE


Description
RoHS B5817W B5817W SCHOTTKY BARRIER DIODE FEATURES DPower dissipation PD : 450 mW Tamb=25 TCollector current .,LIF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range OTJ Tstg: -55 to +150 CMARKING SJ Unit mm ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ONParameter Reverse breakdown voltage RReverse vo...



WEJ

B5817W

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