N-Channel MOSFET. DX840F Datasheet

DX840F MOSFET. Datasheet pdf. Equivalent


Dexin Chip DX840F
DX840R / DX840F
N-Channel MOSFET 500V, 9.0 A, 0.85
General Description
The DX840R/F uses advanced DeXins
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F9N50B is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 500V
ID = 9.0A
@VGS = 10V
RDS(ON) 0.85@VGS = 10V
Applications
Power Supply
PFC
Ballast
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
TC=25 oC
TC=100 oC
TC=25 oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PDθJA
EAR
dv/dt
EAS
TJ, Tstg
MDP9N50B MDF9N50B
500
±30
9.0 9.0*
5.5 5.5*
36 36*
120 38
0.95 0.3
12
4.5
300
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
R
RθJC
MDP9N50B
62.5
1.05
MDF9N50B
62.5
3.3
Unit
oC/W
1 www.dexinchip.com.


DX840F Datasheet
Recommendation DX840F Datasheet
Part DX840F
Description N-Channel MOSFET
Feature DX840F; DX840R / DX840F N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The DX840R/F uses advanced .
Manufacture Dexin Chip
Datasheet
Download DX840F Datasheet




Dexin Chip DX840F
Ordering Information
Part Number
DX840R
DX840F
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta = 25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
Min
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 4.5A
VDS = 30V, ID = 4.5A
500
2.0
-
-
-
VDS = 400V, ID = 9.0A, VGS = 10V (3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 9.0A,
RG = 25(3)
-
-
-
-
-
-
-
-
-
-
IS = 9.0A, VGS = 0V
IF = 9.0A, dl/dt = 100A/µs(3)
-
-
-
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 9.0A, di/dt200A/us, VDDBVDSS, Rg =25, Starting TJ=25°C
4. L=6.7mH, IAS=9.0A, VDD=50V, , Rg =25, Starting TJ=25°C
Typ
-
-
-
-
0.72
7
15.7
3.4
5.3
792
5.0
101
14.1
27.3
68
37.3
9.0
272
2.0
Max
-
4.0
1
100
0.85
-
-
-
-
-
-
-
-
-
-
-
-
1.4
Unit
V
µA
nA
S
nC
pF
ns
A
V
ns
µC
Dec 2011. Version 1.0
2 www.dexinchip.com.



Dexin Chip DX840F
20
V =5.0V
gs
=5.5V
16 =6.0V
=6.5V
=7.0V
=8.0V
12
=10.0V
=15.0V
8
Notes
1. 250Pulse Test
2. TC=25
4
0
0
5
10 15
20
V ,Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
25
3.0
Notes :
1. V = 10 V
2.5
GS
2. I = 4.5A
D
2.0
1.5
1.0
0.5
0.0
-50
0 50 100
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
150
1.6
1.4
1.2
1.0
V =10V
GS
V =20V
0.8 GS
0.6
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5
I ,Drain Current [A]
Fig.2 On-ResisDtance Variation with
Drain Current and Gate Voltage
20.0
1.2
Notes :
1. VGS = 0 V
2. ID = 250
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ , Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
10 1. Vds=30V
150
1
25-55
0.1
3
45
VGS [V]
6
Fig.5 Transfer Characteristics
7
Notes :
1. V = 0 V
GS
2.250µs Pulse test
10
150
1
25
0.1
0.2
0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Dec 2011. Version 1.0
3 www.dexinchip.com.







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