PNP Transistors. KXA1502 Datasheet

KXA1502 Transistors. Datasheet pdf. Equivalent


Kexin KXA1502
SMD Type
PNP Transistors
KXA1502
Transistors
Features
Collector Power Dissipation: PC=0.5W
Collector Current: IC=-1.5A
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-20
-5
-1.5
0.5
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
Marking
Marking
B772
Symbol
Test conditions
V(BR)CBO IC=-100μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100μA, IC=0
ICBO VCB=-40V, IE=0
IEBO VEB=-5V, IC=0
VCE=-1V, IC=-100mA
hFE
VCE=-1V, IC=-800mA
VCE(sat) IC=-800mA, IB=-80mA
VBE(sat) IC=-800mA, IB=-80mA
Cob VCB=-10V,IE=0,f=1MHz
fT VCE= -6V, IC= -20mA ,f=30MHz
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-40 V
-20 -40 V
-5 V
-0.1 μA
-0.1 μA
160 320
40
-0.5 V
-1.2 V
20 pF
100 MHz
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KXA1502 Datasheet
Recommendation KXA1502 Datasheet
Part KXA1502
Description PNP Transistors
Feature KXA1502; SMD Type PNP Transistors KXA1502 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● .
Manufacture Kexin
Datasheet
Download KXA1502 Datasheet




Kexin KXA1502
SMD Type
Transistors
PNP Transistors
KXA1502
Typical Characteristics
-0.5
IB=-4.0mA
-0.4 IB=-3.5mA
IB=-3.0mA
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
IB=-1.0mA
-0.1
IB=-0.5mA
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
100
10
1
-0.1
VCE = -1V
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
-10000
IC=10IB
-1000
-100
VBE(sat)
VCE(sat)
-10
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
-100
VCE = -1V
-10
-1
-0.1
-0.0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
-1.2
100 1000
f=1MHz
VCE=-10V
IE=0
10 100
1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
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10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT







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