N-Channel MOSFET. SGM2310A Datasheet

SGM2310A MOSFET. Datasheet pdf. Equivalent


SeCoS SGM2310A
Elektronische Bauelemente
SGM2310A
5 A, 60 V, RDS(ON) 115 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
DESCRIPTION
The SGM2310A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device. The SGM2310A is universally
used for all commercial-industrial applications.
FEATURES
Simple drive requirement
Super high density cell design for extremely low RDS(ON)
MARKING
D
24
A
Top View C B
KL
E
123
D
F GH
4
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
--
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
2310A
= Date code
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient3(Max).
1
G
3
S
SYMBOL
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @ TA = 25°C
TJ, TSTG
SYMBOL
RθJA
RATINGS
60
±20
5.0
4.0
10
1.5
0.01
-55~150
VALUE
83.3
UNIT
V
V
A
A
A
W
W / °C
°C
UNIT
°C / W
http://www.SeCoSGmbH.com/
16-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4


SGM2310A Datasheet
Recommendation SGM2310A Datasheet
Part SGM2310A
Description N-Channel MOSFET
Feature SGM2310A; Elektronische Bauelemente SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFE.
Manufacture SeCoS
Datasheet
Download SGM2310A Datasheet




SeCoS SGM2310A
Elektronische Bauelemente
SGM2310A
5 A, 60 V, RDS(ON) 115 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITIONS
Drain-Source Breakdown Voltage
BVDSS
60 -
-
Gate Threshold Voltage
VGS(th)
0.5 - 1.5
Forward Transconductance
gfs - 12 -
Gate-Source Leakage Current
IGSS - - ±100
Drain-Source Leakage Current (TJ=25)
Drain-Source Leakage Current (TJ=70)
- -1
IDSS
- - 10
Static Drain-Source On-Resistance
- - 115
RDS(ON)
- - 125
Total Gate Charge2
Qg - 4.0 -
Gate-Source Charge
Qgs - 1.2 -
Gate-Drain (“Miller”) Charge
Qgd - 1.0 -
Turn-on Delay Time2
Td(on)
- 6-
Rise Time
Tr - 12 -
Turn-off Delay Time
Td(off)
- 18 -
Fall Time
Tf - 10 -
Input Capacitance
Ciss - 320 -
Output Capacitance
Coss
- 42 -
Reverse Transfer Capacitance
Crss - 20 -
SOURCE-DRAIN DIODE
Forward On Voltage2
VSD - - 1.2
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width300µs, duty cycle2%.
3. Surface mounted on FR4 board, t 10sec.
V VGS = 0, ID = 250µA
V VDS=VGS, ID=250µA
S VDS = 15V, ID = 4A
nA VGS = ±20V
µA VDS = 60 V, VGS = 0
VDS = 60 V, VGS = 0
mVGS=10V, ID=5.0A
VGS=4.5V, ID=4.5A
ID = 4 A
nC VDS = 30 V
VGS =4.5 V
VDD = 30 V
nS ID =2.5 A
VGS =10 V
RG = 6, RL = 12
VGS = 0 V
pF VDS = 30 V
f = 1.0 MHz
V IS=2.5A, VGS=0V
http://www.SeCoSGmbH.com/
16-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



SeCoS SGM2310A
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM2310A
5 A, 60 V, RDS(ON) 115 m
N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
16-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4





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