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Recovery Rectifiers. RS3J Datasheet

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Recovery Rectifiers. RS3J Datasheet
















RS3J Rectifiers. Datasheet pdf. Equivalent













Part

RS3J

Description

Surface Mount Fast Recovery Rectifiers



Feature


Pb RoHS COMPLIANCE CREAT BY ART Featu res — For surface mounted application — Glass passivated junction chip — Bu ilt-in strain relief, ideal for automat ed placement — Plastic material used c arries Underwriters Laboratory Classifi cation 94V-0 — Fast switching for high efficiency — High temperature solderi ng: 260℃ / 10 seconds at terminals — Green compound with suffix.
Manufacture

Taiwan Semiconductor

Datasheet
Download RS3J Datasheet


Taiwan Semiconductor RS3J

RS3J; "G" on packing code & prefix "G" on dat ecode RS3A - RS3M 3.0 AMP. Surface Mou nt Fast Recovery Rectifiers SMC/DO-214A B Mechanical Data — Case: Molded plas tic — Terminals: Pure tin plated, Lead free — Polarity: Indicated by cathode band — Packing: 16mm tape per EIA STD RS-481 — Weight: 0.21 grams Dimensio ns in inches and (millimeters) Marking Diagram RS3X = Speci.


Taiwan Semiconductor RS3J

fic Device Code G = Green Compound Y = Year M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless ot herwise specified. Single phase, half w ave, 60 Hz, resistive or inductive load . For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltag e Maximum DC Blockin.


Taiwan Semiconductor RS3J

g Voltage Maximum Average Forward Rectif ied Current @ TL=75℃ Symbol VRRM VRM S VDC RS 3A 50 35 50 IF(AV) Peak For ward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JE DEC method) IFSM Maximum Instantaneou s Forward Voltage (Note 1) @3A VF Max imum Reverse Current @ Rated VR TA=25 T A=125 ℃ IR Maximum Reverse Rec overy Time (Note 2) Trr.





Part

RS3J

Description

Surface Mount Fast Recovery Rectifiers



Feature


Pb RoHS COMPLIANCE CREAT BY ART Featu res — For surface mounted application — Glass passivated junction chip — Bu ilt-in strain relief, ideal for automat ed placement — Plastic material used c arries Underwriters Laboratory Classifi cation 94V-0 — Fast switching for high efficiency — High temperature solderi ng: 260℃ / 10 seconds at terminals — Green compound with suffix.
Manufacture

Taiwan Semiconductor

Datasheet
Download RS3J Datasheet




 RS3J
Pb
RoHS
COMPLIANCE
CREAT BY ART
Features
— For surface mounted application
— Glass passivated junction chip
— Built-in strain relief, ideal for automated
placement
— Plastic material used carries Underwriters
Laboratory Classification 94V-0
— Fast switching for high efficiency
— High temperature soldering:
260/ 10 seconds at terminals
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
RS3A - RS3M
3.0 AMP. Surface Mount Fast Recovery Rectifiers
SMC/DO-214AB
Mechanical Data
— Case: Molded plastic
— Terminals: Pure tin plated, Lead free
— Polarity: Indicated by cathode band
— Packing: 16mm tape per EIA STD RS-481
— Weight: 0.21 grams
Dimensions in inches and (millimeters)
Marking Diagram
RS3X
= Specific Device Code
G = Green Compound
Y = Year
M = Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@ TL=75
Symbol
VRRM
VRMS
VDC
RS
3A
50
35
50
IF(AV)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage (Note 1)
@3A
VF
Maximum Reverse Current @ Rated VR TA=25
T A=125
IR
Maximum Reverse Recovery Time (Note 2)
Trr
Typical Junction Capacitance (Note 3)
Cj
Typical Thermal Resistance
RθjA
RθjL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
RS RS RS RS
3B 3D 3G 3J
100 200 400 600
70 140 280 420
100 200 400 600
3
100
1.3
10
250
150 250
60
50
15
- 55 to + 150
- 55 to + 150
RS RS
3K 3M
800 1000
560 700
800 1000
Unit
V
V
V
A
A
V
uA
500 nS
pF
OC/W
OC
OC
Version:E11




 RS3J
RATINGS AND CHARACTERISTIC CURVES (RS3A THRU RS3M)
FIG.1 FORWARD CURRENT DERATING CURVE
3.5
3
2.5
2
1.5
1
RESISTIVE OR
0.5 INDUCTIVE LOAD
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE (oC)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
8.3mS Single Half Sine Wave
125 JEDEC Method
100
75
50
25
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
TA=125
10
TA=75
1
TA=25
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
100
Pulse Width=300us
1% Duty Cycle
10 TA=125
FIG. 4 TYPICAL JUNCTION CAPACITANCE
100
TA=25
f=1.0MHz
Vsig=50mVp-p
10
1
10
REVERSE VOLTAGE (V)
100
1 TA=25
TA=40
0.1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
2
Version:E11








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