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2SD1351

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Silicon NPN Power Transistors

Description
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general p...


Inchange Semiconductor

2SD1351

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