Operational Amplifier. MUSES8920 Datasheet

MUSES8920 Amplifier. Datasheet pdf. Equivalent

MUSES8920 Datasheet
Recommendation MUSES8920 Datasheet
Part MUSES8920
Description Dual Operational Amplifier
Feature MUSES8920; MUSES8920 High Quality Audio J-FET Input Dual Operational Amplifier ■ GENERAL DESCRIPTION The MUSES.
Manufacture New Japan Radio
Datasheet
Download MUSES8920 Datasheet




New Japan Radio MUSES8920
MUSES8920
High Quality Audio J-FET Input
Dual Operational Amplifier
GENERAL DESCRIPTION
The MUSES8920 is a high quality audio J-FET input dual operational
amplifier, which is optimized for high-end audio, professional audio and
portable audio applications.
It is suitable for audio preamplifiers, active filters, and line amplifiers.
In addition, J-FET input type has advantage of the low input bias current,
it is suitable for transimpedance amplifier (I/V converter).
PACKAGE OUTLINE
MUSES8920D
MUSES8920E
(DIP8)
(SOP8 JEDEC 150mil (EMP8))
FEATURES
Operating Voltage
Low Noise
THD
Slew Rate
GBW
High Output Current
J-FET Input
Bipolar Technology
Package Outline
APPLICATIONS
Portable Audio
Home Audio
Professional Audio
Car Audio
Digital
Input
DA
Converter
±3.5V to ±17V
8nV/Hz typ.
0.0004% typ. (Av=1)
25V/µs typ.
11MHz typ.
100mA typ.(short-circuit current)
DIP8, SOP8 JEDEC 150mil
DFN8-X7 (ESON8-X7)(3.5mm x 4.0mm)
MUSES8920KX7
(DFN8-X7 (ESON8-X7))
PIN CONFIGLATION
DIP8, SOP8 JEDEC 150mil
1
8
1. A OUTPUT
2. A -INPUT
2A
7
3. A +INPUT
4. V-
5. B +INPUT
3 B 6 6. B -INPUT
7. B OUTPUT
4 5 8.V+
DFN8-X7 (ESON8-X7)
Top View
Bottom View
1 88 1
2A
77
2
3 B 6 6 Exposed 3
4 5 5 Pad 4
About Exposed Pad
Connect the Exposed Pad on the GND.
I/V
Analog
Output
I/V LPF Buff
DAC Output I/V converter + LPF circuit
Ver.10
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
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New Japan Radio MUSES8920
MUSES8920
ABSOLUTE MAXIMUM RATING (Ta=25ºC unless otherwise specified)
PARAMETER
Supply Voltage
SYMBOL
V+/V-
RATING
±18
UNIT
V
Differential Input Voltage Range
Common Mode Input Voltage Range
Power Dissipation
VID
VICM
PD
±30
±15 (Note1)
DIP8:870
SOP8:900 (Note2)
DFN8-X7: 690 (Note2)
2900 (Note3)
V
V
mW
Operating Temperature Range
Topr
-40 to +125
ºC
Storage Temperature Range
Tstg
-50 to +150
ºC
(Note1) For supply Voltages less than ±15 V, the maximum input voltage is equal to the Supply Voltage.
(Note2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4). DFN8 is connecting to GND in the center part on the back.
(Note3) EIA/JEDEC STANDARD Test board (76.2 x 114.3 x 1.6mm, 4layers, FR-4, Applying a thermal via hole to a board based on JEDEC standard JESD51-5)
mounting. The PAD connecting to GND in the center part on the back.
(Note4) NJM8920 is ESD (electrostatic discharge) sensitive device.
Therefore, proper ESD precautions are recommended to avoid permanent damage or loss of functionality.
RECOMMENDED OPERATING VOLTAGE (Ta=25ºC)
PARAMETER
Supply Voltage
SYMBOL
V+/V-
TEST CONDITION
MIN. TYP. MAX. UNIT
±3.5 - ±17 V
ELECTRICAL CHARACTERISTICS
DC CHARACTERISTICS (V+/V-=±15V, Ta=25ºC, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
Supply Current
Icc RL=, No Signal
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain1
Voltage Gain2
Voltage Gain3
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
VIO
IB
IIO
AV1
AV2
AV3
CMR
SVR
RS=50,
RL=10k, Vo=±13V
RL=2k, Vo=±12.8V
RL=600, Vo=12.5V
VICM=±12.5V (Note5)
V+/V-=±3.5 to ±17V (Note6)
Maximum Output Voltage1
VOM1 RL=10k
Maximum Output Voltage2
VOM2 RL=2k
Maximum Output Voltage3
VOM3 RL=600
Common Mode Input Voltage Range
VICM CMR80dB
(Note5) CMR is calculated by specified change in offset voltage. (VICM=0V to +12.5V, VICM=0V to -12.5V)
(Note6) SVR is calculated by specified change in offset voltage. (V+/V-=±3.5 to ±17V)
AC CHARACTERISTICS (V+/V-=±15V, Ta=25ºC, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
Gain Bandwidth Product
Unity Gain Frequency
Phase Margin
Equivalent Input Noise Voltage1
Equivalent Input Noise Voltage2
Equivalent Input Noise Voltage3
Total Harmonic Distortion
Channel Separation
Slew Rate
(Note7) DIP8 and SOP8
(Note8) DFN8-X7
GB
fT
ΦM
VNI1
VNI2
VNI3
THD
CS
SR
f=10kHz
AV=+100, RS=100, RL=2k, CL=10pF
AV=+100, RS=100, RL=2k, CL=10pF
f=1kHz
RIAA, RS=2.2k, 30kHz, LPF (Note7)
f=20 to 20kHz (Note8)
f=1kHz , AV=+10, Vo=5Vrms, RL=2k
f=1kHz , AV=-100, RL=2k
AV=1, VIN=2Vp-p, RL=2k, CL=10pF
MIN.
-
-
-
-
106
105
105
80
80
±13
±12.8
±12.5
±12.5
TYP.
9
0.8
5
2
135
133
130
110
110
±14
±13.8
±13.5
±14
MAX.
12
5
250
220
-
-
-
-
-
-
-
-
-
UNIT
mA
mV
pA
pA
dB
dB
dB
dB
dB
V
V
V
V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
11
10
70
8
1.1
1.1
0.0004
150
25
MAX.
-
-
-
-
3.5
-
-
-
-
UNIT
MHz
MHz
Deg
nV/Hz
μVrms
μVrms
%
dB
V/us
-2-
Ver.10



New Japan Radio MUSES8920
MUSES8920
POWER DISSIPATION vs. AMBIENT TEMPERATURE
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power
Dissipation PD. The dependence of the MUSES8920 PD on ambient temperature is shown in Fig 1. The plots are depended on
following two points. The first is PD on ambient temperature 25ºC, which is the maximum power dissipation. The second is 0W,
which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage
temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD lower than 25ºC to it on
25ºC. The PD is shown following formula as a function of the ambient temperature between those points.
Dissipation Power PD =
Tjmax - Ta
ja
[W] (Ta=25ºC to Ta=150ºC)
Where, ja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on MUSES8920 is obtained using following equation.
(Actual Dissipation Power) = (Supply Current Icc) X (Supply Voltage V+– V-) – (Output Power Po)
The MUSES8920 should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
3000
2500
Fig 1
DFN8-X7 4layers
2000
1500
1000
500
SOP8
DIP8
DFN8-X7 2layers
0
0 50 100 150
Ambient Temperature Ta [˚C]
Ver.10
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