Photo Diode. NJL6401R-3 Datasheet

NJL6401R-3 Diode. Datasheet pdf. Equivalent

NJL6401R-3 Datasheet
Recommendation NJL6401R-3 Datasheet
Part NJL6401R-3
Description COBP High Speed Photo Diode
Feature NJL6401R-3; NJL6401R-3 COBP High Speed Photo Diode GENERAL DESCRIPTION The NJL6401R-3 is a high-speed PIN ph.
Manufacture New Japan Radio
Datasheet
Download NJL6401R-3 Datasheet




New Japan Radio NJL6401R-3
NJL6401R-3
COBP High Speed Photo Diode
GENERAL DESCRIPTION
The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to
infrared light from the blue-violet light.
The features are low wavelength dependence and fast fall-time.
An ultra-small and thin package of COBP is adopted, and providing high efficient space-saving.
.
FEATURES
Corresponding to three wavelength (=405nm/650nm/780nm)
Short rise-time, fall-time
2ns typ. (=405nm/650nm/780nm, VR=2.5V, 10-90%)
High speed
250MHz ( =780nm)
300MHz ( =650nm)
350MHz ( =405nm)
Miniature, thin package 1.2mmX1.7mmX0.8mm
Active area
0.7mmX0.7mm
APPLICATIONS
Laser monitor for Blu-ray, etc.
Monitor for RGB wavelength
Photoelectric switch, Space light transmitting, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER
Reverse Voltage
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
SYMBOL
VR
Topr
Tstg
Tsol
RATINGS
35
-30 to +85
-40 to +100
255
UNIT
V
C
C
C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C)
PARAMETER
Dark Current
Forward Voltage
Capacitance
Peak Wavelength
Sensitivity
Rise time, Fall time
Cut off Frequency
SYMBOL
ID
VF
Ct
P
S
tr/tf
fc
TEST CONDITION
VR=10V
IF=1mA
VR=2.5V, f=1MHz
VR=2.5V, =780nm
VR=2.5V, =650nm
VR=2.5V, =405nm
VR=2.5V, =780nm, 10-90%, 1mW
VR=2.5V, =650nm, 10-90%, 1mW
VR=2.5V, =405nm, 10-90%, 1mW
VR=2.5V, =780nm, RL=50-3dB
VR=2.5V, =650nm, RL=50-3dB
VR=2.5V, =405nm, RL=50-3dB
MIN TYP MAX UNIT
— 0.1 2.0 nA
— — 1.0 V
— 4 — pF
— 800 — nm
0.37 0.47 — A/W
0.34 0.42 — A/W
0.22 0.28 — A/W
— 2 — ns
— 2 — ns
— 2 — ns
— 250 — MHz
— 300 — MHz
— 350 — MHz
20.June.2014 Rev.2.2
-1-



New Japan Radio NJL6401R-3
OUTLINE
Unit : mm
Active area: 0.7x0.7mm
1
1.2
2
1: anode
2: cathode
NJL6401R-3
(0.2)
Anode
Resist
0.8±0.15
1
Cathode
GENERAL TOLERANCE : ± 0.1mm
1.16
PCB Pattern
20.June.2014 Rev.2.2
-2-



New Japan Radio NJL6401R-3
TYPICAL CHARACTERISTICS
Relative Sensitivity vs. Illuminance (Ta=25C)
1.00E-03
VR=2.5V
1.00E-04
λ=650nm,780nm
1.00E-05
λ=405nm
1.00E-06
1.00E-07
1.00E-08
0.01
0.1 1
10
Illuminance (mW/cm2)
100
Dark Current vs. Temperature
1.00E-08
1.00E-09
V R=2.5V
1.00E-10
1.00E-11
1.00E-12
1.00E-13
1.00E-14
-40
-20
0
20 40 60 80 100
Ambient Temperature Ta(ºC)
Rise Time vs. Reverse Voltage (Ta=25C)
5.0
RL=50Ω
4.0
λ=780nm
3.0
λ=405nm,650nm
2.0
1.0
0.0
0 12 34 5
VR(V)
20.June.2014 Rev.2.2
NJL6401R-3
Spectral Response (Ta=25C)
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
300 400 500 600 700 800 900 1000
Wavelength(nm)
Relative Sensitivity vs. Temperature
105%
104%
103% λ=780nm
102% λ=405nm
101% λ=650nm
V R=2.5V
100%
99%
98%
97%
96%
95%
-40
-20
0
20 40 60 80 100
Ambient Temperature Ta(ºC)
Fall Time vs. Reverse Voltage (Ta=25C)
5.0
RL=50Ω
4.0
λ=780nm
3.0
λ=405nm,650nm
2.0
1.0
0.0
0 12345
V R(V )
-3-







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