Photocoupler. TLP170J Datasheet

TLP170J Photocoupler. Datasheet pdf. Equivalent

TLP170J Datasheet
Recommendation TLP170J Datasheet
Part TLP170J
Description Photocoupler
Feature TLP170J; TOSHIBA Photocoupler Photorelay TLP170J TLP170J Modem·Fax Cards, Modems in PC Telecommunications P.
Manufacture Toshiba
Datasheet
Download TLP170J Datasheet




Toshiba TLP170J
TOSHIBA Photocoupler Photorelay
TLP170J
TLP170J
Modem·Fax Cards, Modems in PC
Telecommunications
PBX
Security Equipment
Measurement Equipment
The Toshiba TLP170J consists of an infrared emitting diode optically
coupled to a photo-MOSFET in a 4-pin SOP package.
This photorelay requires 1 mA of LED current to turn it on. It is suitable
for applications that need electrical power savings.
4-pin SOP (2.54SOP4): Height = 2.1 mm, Pitch = 2.54 mm
1-Form-A
Peak OFF-state voltage: 600 V (min)
Trigger LED current: 1 mA (max)
ON-state current: 90 mA (max)
ON-state resistance: 40 Ω (max, t < 1 s)
ON-state resistance: 60 Ω (max, continuous)
Isolation voltage: 1500 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved: EN 60747-5-5 (Note 1)
Note 1: When a VDE approved type is needed,
please designate the Option(V4).
Pin Configuration (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
11-5H1
Weight: 0.1 g (typ.)
1
4
2
3
1: Anode
2: Cathode
3: Drain
4: Drain
Internal Circuit
1
4
2
3
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2009-06
2019-06-17



Toshiba TLP170J
Absolute Maximum Rating (Ta = 25°C)
TLP170J
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 25°C)
Pulse forward current (100 μs pulse, 100 pps)
LED Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta 25°C)
Junction temperature
OFF-state output terminal voltage
ON-state current
ON-state current derating (Ta 25°C)
Detector
Output power dissipation
Output power dissipation derating (Ta 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1)
IF
IF/°C
IFP
VR
PD
PD /°C
Tj
VOFF
ION
ION/°C
PO
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
50
0.5
1
5
50
-0.5
125
600
90
0.9
300
3.0
125
55 to 125
40 to 85
260
1500
mA
mA/°C
A
V
mW
mW/°C
°C
V
mA
mA/°C
mW
mW / °C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
ON-state current
Operating temperature
VDD
IF
ION
Topr
480
V
2
25
mA
70
mA
20
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
LED Reverse current
Capacitance
OFF-state current
Detector
Capacitance
Symbol
VF
IR
CT
IOFF
COFF
Test Condition
IF = 10 mA
VR = 5 V
VF = 0 V, f = 1 MHz
VOFF = 600 V
V = 0 V, f = 1 MHz
Min Typ. Max Unit
1.0 1.15 1.3
V
10
μA
30
pF
1 1000 nA
75
pF
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-17



Toshiba TLP170J
Coupled Electrical Characteristics (Ta = 25°C)
TLP170J
Characteristics
Trigger LED current
Return LED current
ON-state resistance
Symbol
IFT
IFC
RON
Test Condition
ION = 90 mA
IOFF = 100 μA
ION = 90 mA, IF= 2 mA, t < 1 s
ION = 90 mA, IF= 2 mA, continuous
Min Typ. Max Unit
0.4
1
mA
0.1
mA
40
Ω
45
60
Isolation Characteristics (Ta = 25°C)
Characteristics
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. 60 %
AC, 60 s
Min Typ. Max Unit
0.8
pF
5 × 1010 1014
Ω
1500
Vrms
Switching Characteristics (Ta = 25°C)
Characteristics
Turn-on time
Turn-on time
Turn-off time
Note 2: Switching time test circuit
Symbol
Test Condition
Min Typ. Max Unit
tON
tON
tOFF
RL = 200 Ω
VDD = 10 V, IF = 2 mA
RL = 200 Ω
VDD = 10 V, IF = 5 mA
RL = 200 Ω
VDD = 10 V, IF = 2 mA
(Note 2)
(Note 2)
(Note 2)
2.0 8.0
5.0 ms
0.5 3.0
IF
1
2
4
RL
VDD
VOUT
3
IF
VOUT
10%
tON
90%
tOFF
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-17







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