Photocoupler Photorelay. TLP220G Datasheet

TLP220G Photorelay. Datasheet pdf. Equivalent

TLP220G Datasheet
Recommendation TLP220G Datasheet
Part TLP220G
Description Photocoupler Photorelay
Feature TLP220G; Photocouplers Photorelay TLP220G TLP220G 1. Applications • Mechanical relay replacements • Securit.
Manufacture Toshiba
Datasheet
Download TLP220G Datasheet




Toshiba TLP220G
Photocouplers Photorelay
TLP220G
TLP220G
1. Applications
• Mechanical relay replacements
• Security Systems
• Measuring Instruments
• Factory Automation (FA)
• Amusement Equipment
• Smart Meters
• Electricity Meters
2. General
The TLP220G photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a 4-
pin DIP package. It provides an isolation voltage of 5000 Vrms, making it suitable for applications that require
reinforced insulation.
3. Features
(1) Normally open (1-Form-A)
(2) OFF-state output terminal voltage: 350 V (min)
(3) Trigger LED current: 2 mA (max)
(4) ON-state current: 100 mA (max)
(5) ON-state resistance: 35 (max, t < 1s)
(6) ON-state resistance: 50 (max, Continuous)
(7) Isolation voltage: 5000 Vrms (min)
(8) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4).
©2017-2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2011-09
2019-11-21
Rev.6.0



Toshiba TLP220G
4. Packaging and Pin Configuration
11-5B2S
5. Internal Circuit
TLP220G
1: Anode
2: Cathode
3: Drain
4: Drain
6. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
7.62-mm Pitch
TLP220G
7.0 (min)
7.0 (min)
0.4 (min)
10.16-mm Pitch
TLP220GF
Unit
8.0 (min)
mm
8.0 (min)
0.4 (min)
©2017-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-11-21
Rev.6.0



Toshiba TLP220G
TLP220G
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
LED Input forward current
IF
30
mA
Input forward current derating
(Ta 25 )
IF/Ta
-0.3
mA/
Input forward current (pulsed)
(100 µs pulse, 100 pps)
IFP
1
A
Input reverse voltage
VR
5
V
Input power dissipation
PD
50
mW
Input power dissipation derating
(Ta 25 )
PD/Ta
-0.5
mW/
Junction temperature
Tj
125
Detector OFF-state output terminal voltage
VOFF
350
V
ON-state current
ION
100
mA
ON-state current derating
(Ta 25 )
ION/Ta
-1.0
mA/
ON-state current (pulsed)
(t = 100 ms, duty = 1/10) IONP
300
mA
Output power dissipation
PO
500
mW
Output power dissipation derating
(Ta 25 )
PO/Ta
-5.0
mW/
Junction temperature
Tj
125
Common Storage temperature
Tstg
-55 to 125
Operating temperature
Topr
-40 to 85
Lead soldering temperature
(10 s)
Tsol
260
Isolation voltage
(AC, 60 s, R.H. 60 %)
BVS
(Note 1)
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Symbol Note Min Typ. Max Unit
Supply voltage
VDD
280
V
Input forward current
IF
3
5
15
mA
ON-state current
ION
100
Operating temperature
Topr
-20
65
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
9. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
VF
IR
Ct
IOFF
COFF
Note
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
VOFF = 350 V
V = 0 V, f = 1 MHz
Min Typ. Max Unit
1.45 1.63 1.75
V
10
µA
40
pF
1
µA
30
pF
©2017-2019
Toshiba Electronic Devices & Storage Corporation
3
2019-11-21
Rev.6.0







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