MOSFET. DMC3036LSD Datasheet

DMC3036LSD MOSFET. Datasheet pdf. Equivalent

DMC3036LSD Datasheet
Recommendation DMC3036LSD Datasheet
Part DMC3036LSD
Description MOSFET
Feature DMC3036LSD; NEW PRODUCT DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • Com.
Manufacture Diodes
Datasheet
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Diodes DMC3036LSD
DMC3036LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Complementary Pair MOSFETs
Low On-Resistance
N-Channel: 36m@ 10V
61m@ 4.5V
P-Channel: 36m@ -10V
64m@ -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.072g (approximate)
SOP-8L
D2
D1
S2 D2
G2 D2 G2
S1 D1
G1 D1
G1
TOP VIEW
TOP VIEW
Internal Schematic
S2
N-Channel MOSFET
Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified
S1
P-Channel MOSFET
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
6.9
5.8
24
Unit
V
V
A
A
Maximum Ratings P-CHANNEL
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@TA = 25°C unless otherwise specified
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±20
-6
-5
-21
Unit
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, on 2oz. Copper pads with RθJA = 50°C/W.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
1 of 7
www.diodes.com
October 2008
© Diodes Incorporated



Diodes DMC3036LSD
DMC3036LSD
Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Min
Typ
Max Unit
Test Condition
BVDSS
IDSS
IGSS
30
⎯ ⎯ V VGS = 0V, ID = 250μA
1 μA VDS = 24V, VGS = 0V
± 100
nA VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
1
0.5
28
51
7.7
2.1 V VDS = VGS, ID = 250μA
36
61
mΩ
VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5.0A
S VDS = 5V, ID = 6.9A
1.2 V VGS = 0V, IS = 1A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
384
67
48
1.3
4.3
8.6
1.2
2.5
pF
pF VDS = 15V, VGS = 0V, f = 1.0MHz
pF
⎯ Ω VGS = 0V VDS = 0V, f = 1MHz
VDS = 10V, VGS = 4.5V, ID = 10A
nC
VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Symbol Min
BVDSS
IDSS
IGSS
-30
VGS(th)
RDS (ON)
|Yfs|
VSD
-1
-0.5
Ciss
Coss
Crss
RG
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Typ
30
53
8.8
637
147
105
3.3
6.8
13.7
1.6
4.2
Max
-1.0
± 100
-2.2
36
64
-1.2
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -24V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -5A
S VDS =-5V, ID = -6A
V VGS = 0V, IS = -1A
pF
pF VDS = -15V, VGS = 0V, f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V, VGS = -4.5V, ID = 6A
nC
VDS = 15V, VGS = -10V, ID = 6A
VDS = 15V, VGS = -10V, ID = 6A
VDS = 15V, VGS = -10V, ID = 6A
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
2 of 7
www.diodes.com
October 2008
© Diodes Incorporated



Diodes DMC3036LSD
DMC3036LSD
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
00
1
0.1
VGS = 10V
N-CHANNEL
30
24
VDS = 5V
Pulsed
VGS = 4.5V
18
TA = -55°C
TA = 25°C
TA = 85°C
TA = 125°C
TA = 150°C
VGS = 3.5V
VGS = 3.0V
VGS = 2.5V
12 34
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
VGS = 4.5V
VGS = 10V
12
6
0
1
0.1
0.08
0.06
0.04
2345
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
6
VGS = 4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.02
0.01
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Fig 3 On-Resistance vs. Drain Current & Gate Voltage
1.6
VGS = 10V
1.4 ID = 10A
0
0 2 4 6 8 10
ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 On-Resistance vs. Drain Current & Temperature
2.5
2.0 ID = 1mA
1.2 VGS = 4.5V 1.5 ID = 250µA
ID = 5A
1.0 1.0
0.8 0.5
0.6
-50
-25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Static Drain-Source On-Resistance
vs. Ambient Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
3 of 7
www.diodes.com
October 2008
© Diodes Incorporated







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